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GaN Semiconductor Devices Market

ID: MRFR/SEM/0668-CR
188 Pages
Ankit Gupta
October 2023

GaN Semiconductor Devices Market Size, Share and Research Report By Device (Transistor, Diode, Rectifier, Power IC, Supply and Inverter, Amplifiers, Lighting and Laser, Switching Systems, and Others), Vertical (Automotive, Industrial, Defense & Aerospace, Consumer Electronics, Telecommunication, Medical and Others), Wafer Size (S2 inch, 4 inch, 6 inch, and More than 6 inches), Type (Power semiconductors, RF semiconductors, and Opto semiconductors), and By Region (North America, Europe, Asia-Pacific, ROW) – Industry Forecast Till 2035

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GaN Semiconductor Devices Market Summary

As per MRFR analysis, the GaN Semiconductor Devices Market Size was estimated at 13253.19 USD Million in 2024. The GaN Semiconductor Devices industry is projected to grow from 16014.1 USD Million in 2025 to 106248.54 USD Million by 2035, exhibiting a compound annual growth rate (CAGR) of 20.83 during the forecast period 2025 - 2035.

Key Market Trends & Highlights

The GaN Semiconductor Devices Market is poised for substantial growth driven by technological advancements and increasing demand across various sectors.

  • The market experiences rising demand in electric vehicles, particularly in the Asia-Pacific region, which is the fastest-growing market.
  • Expansion in renewable energy applications is notable, with North America leading in market size and investment.
  • Advancements in telecommunications are driving innovation, especially in the context of 5G technology adoption.
  • Key market drivers include the surge in renewable energy systems and the demand for efficient charging solutions, significantly impacting power electronics.

Market Size & Forecast

2024 Market Size 13253.19 (USD Million)
2035 Market Size 106248.54 (USD Million)
CAGR (2025 - 2035) 20.83%

Major Players

Infineon Technologies (DE), Nexperia (NL), Cree, Inc. (US), GaN Systems (CA), Transphorm (US), Efficient Power Conversion (US), Qorvo (US), Texas Instruments (US), STMicroelectronics (FR)

GaN Semiconductor Devices Market Trends

The GaN Semiconductor Devices Market is currently experiencing a transformative phase characterized by rapid advancements in technology and increasing demand across various sectors. The unique properties of Gallium Nitride, such as high efficiency and thermal conductivity, are driving its adoption in applications ranging from consumer electronics to renewable energy systems. As industries seek to enhance performance and reduce energy consumption, GaN devices are emerging as a preferred choice, indicating a shift towards more sustainable solutions. Furthermore, the market is witnessing a surge in investments aimed at research and development, which could potentially lead to innovative applications and improved manufacturing processes. In addition to technological advancements, the competitive landscape of the GaN Semiconductor Devices Market is evolving. Key players are focusing on strategic partnerships and collaborations to strengthen their market position and expand their product offerings. This trend suggests a collective effort to address the growing needs of end-users while navigating the complexities of supply chain dynamics. As the market continues to mature, it appears poised for substantial growth, driven by the increasing integration of GaN technology in various electronic devices and systems, thereby enhancing overall efficiency and performance.

Rising Demand in Electric Vehicles

The GaN Semiconductor Devices Market is witnessing a notable increase in demand driven by the electric vehicle sector. As automakers strive to improve energy efficiency and performance, GaN devices are becoming integral to power electronics in electric vehicles. This trend indicates a broader shift towards sustainable transportation solutions.

Expansion in Renewable Energy Applications

There is a growing trend towards the utilization of GaN semiconductor devices in renewable energy applications. The efficiency and reliability of GaN technology make it suitable for solar inverters and wind energy systems, suggesting a potential for significant market growth in the renewable sector.

Advancements in Telecommunications

The telecommunications industry is increasingly adopting GaN technology for its high-frequency capabilities. This trend reflects the need for enhanced performance in communication systems, particularly with the rollout of next-generation networks, indicating a promising future for GaN devices in this sector.

GaN Semiconductor Devices Market Drivers

Market Growth Projections

The Global GaN Semiconductor Devices Market Industry is projected to experience substantial growth over the coming years. The market is expected to reach a value of 13.2 USD Billion in 2024 and is anticipated to expand significantly, potentially reaching 106.3 USD Billion by 2035. This growth trajectory suggests a robust compound annual growth rate (CAGR) of 20.83% from 2025 to 2035. Such projections indicate a strong demand for GaN technology across various applications, including power electronics, telecommunications, and renewable energy. The anticipated growth reflects the increasing reliance on GaN devices to meet the evolving needs of modern technology and energy efficiency.

Growth in Renewable Energy Sector

The Global GaN Semiconductor Devices Market Industry is benefiting from the growth in the renewable energy sector, particularly in solar and wind energy applications. GaN devices are increasingly employed in power conversion systems, enabling more efficient energy harvesting and management. As governments worldwide invest in renewable energy infrastructure, the demand for GaN technology is expected to rise. This trend is indicative of a broader shift towards sustainable energy solutions, with the market projected to grow at a CAGR of 20.83% from 2025 to 2035. The integration of GaN devices in renewable energy systems not only enhances efficiency but also supports global efforts to combat climate change.

Advancements in Electric Vehicle Technology

The Global GaN Semiconductor Devices Market Industry is significantly influenced by advancements in electric vehicle (EV) technology. As the automotive sector pivots towards electrification, GaN devices are increasingly utilized in EV powertrains and charging systems due to their ability to handle high voltages and improve efficiency. This trend is expected to propel the market, with the industry projected to reach 106.3 USD Billion by 2035. The integration of GaN technology in EVs not only enhances performance but also contributes to the overall reduction of carbon emissions, aligning with global sustainability goals. Consequently, the automotive industry's transition to electric mobility is a crucial driver for the GaN semiconductor market.

Rising Demand for Efficient Power Electronics

The Global GaN Semiconductor Devices Market Industry is experiencing a surge in demand for efficient power electronics, driven by the increasing need for energy-efficient solutions across various sectors. Industries such as telecommunications, automotive, and consumer electronics are adopting GaN technology due to its superior efficiency and thermal performance compared to traditional silicon-based devices. This shift is expected to contribute to the market's growth, with projections indicating a market value of 13.2 USD Billion in 2024. As companies seek to reduce energy consumption and enhance performance, the adoption of GaN devices is likely to accelerate, further solidifying their role in the power electronics landscape.

Telecommunications Infrastructure Development

The Global GaN Semiconductor Devices Market Industry is poised for growth due to the ongoing development of telecommunications infrastructure, particularly with the rollout of 5G networks. GaN technology offers advantages in terms of high-frequency performance and power efficiency, making it an ideal choice for 5G base stations and related equipment. As telecommunications companies invest heavily in upgrading their infrastructure, the demand for GaN devices is expected to rise significantly. This trend aligns with the increasing need for faster and more reliable communication networks, further driving the market's expansion. The integration of GaN technology in telecommunications is likely to enhance overall network performance.

Increased Investment in Research and Development

The Global GaN Semiconductor Devices Market Industry is witnessing increased investment in research and development, which is fostering innovation and driving market growth. Companies are focusing on developing new GaN materials and fabrication techniques to enhance device performance and reduce costs. This emphasis on R&D is expected to lead to the introduction of advanced GaN devices with improved capabilities, thereby expanding their application range. As the market evolves, the continuous innovation in GaN technology is likely to attract further investment, reinforcing the industry's growth trajectory. The commitment to R&D is crucial for maintaining competitiveness in the rapidly advancing semiconductor landscape.

Market Segment Insights

By Application: Power Electronics (Largest) vs. Electric Vehicles (Fastest-Growing)

The GaN Semiconductor Devices Market is characterized by diverse applications, with Power Electronics holding the largest market share. This segment is critical for a broad array of applications including consumer electronics, industrial machinery, and renewable energy systems. Radio Frequency and Optoelectronics also contribute significantly to the market, but to a lesser extent compared to Power Electronics, indicating the sector's dominance. Lighting applications, while existing, are growing slowly in market share but still play a crucial role in energy-efficient technologies. The Electric Vehicles segment is the fastest-growing within the GaN Semiconductor Devices Market as manufacturers increasingly seek to enhance the efficiency of power management in EVs. The rising demand for electric and hybrid vehicles, coupled with technological advancements, are key drivers behind this growth. Additionally, the need for faster charging solutions and improved energy conversion technologies position this segment for rapid expansion in the coming years.

Power Electronics: Dominant vs. Electric Vehicles: Emerging

Power Electronics remains the dominant application in the GaN Semiconductor Devices Market due to its extensive use in energy conversion and management systems in various sectors. This segment benefits from the increasing adoption of energy-efficient technologies and renewable energy sources which require advanced semiconductor solutions. Conversely, Electric Vehicles are emerging as a transformative segment fueled by global sustainability goals and government incentives for cleaner technologies. As battery technology improves and the infrastructure for EV charging expands, the adoption of GaN semiconductors is expected to surge, making it critical for future developments in automotive power systems and energy management.

By End Use: Consumer Electronics (Largest) vs. Telecommunications (Fastest-Growing)

The GaN semiconductor devices market is experiencing significant distribution across its end-use segments, with consumer electronics taking the lead. This sector benefits from the surge in demand for high-performance electronics such as smartphones, laptops, and gaming consoles. Telecommunications, while slightly smaller in market share, is demonstrating rapid growth due to enhancements in network infrastructure and the rollout of 5G technology, which leverage GaN devices for higher efficiency and reliability. As the industry evolves, growth trends indicate that the telecommunications sector is set to become a major player, fueled by increasing investments in 5G networks and the need for advanced communication systems. Meanwhile, the consumer electronics segment continues to thrive, driven by innovation and consumer preferences for high-efficiency devices. The robust performance in these two segments highlights the diverse applications of GaN semiconductor devices across various industries.

Consumer Electronics (Dominant) vs. Telecommunications (Emerging)

In the GaN semiconductor devices market, the consumer electronics segment is established as the dominant force, primarily due to its integral role in the production of advanced gadgets that require efficient power management. The increasing adoption of laptops, tablets, and smart appliances fosters a continuous demand for GaN technology, known for its ability to operate at higher voltages and temperatures without compromising performance. Additionally, innovative product development aimed at enhancing user experience is propelling this segment forward. On the other hand, the telecommunications segment is emerging rapidly, primarily attributed to the growth of 5G technology and increasing broadband demand. GaN devices are critical for supporting the necessary infrastructure, such as base stations and communication satellites, effectively enabling faster and more reliable wireless connections. As a result, this segment's growth trajectory reflects an increasing emphasis on high-frequency, high-power applications that capitalize on GaN's superior properties.

By Material Type: Gallium Nitride (Largest) vs. Silicon Carbide (Fastest-Growing)

In the GaN Semiconductor Devices Market, Gallium Nitride dominates the material segment due to its superior performance characteristics, accounting for the largest share of the market. It is widely preferred for high-power and high-frequency applications, leading to its extensive adoption in various sectors including consumer electronics and automotive. Silicon Carbide, while a smaller segment, is rapidly gaining traction thanks to its ability to efficiently handle higher voltages, positioning itself as a strong contender in the market and attracting significant investments.

Gallium Nitride (Dominant) vs. Silicon Carbide (Emerging)

Gallium Nitride (GaN) is renowned for its high efficiency and thermal conductivity, qualities that make it highly suitable for advanced applications in power electronics and RF devices. Its dominant position in the GaN Semiconductor Devices Market is attributed to its effectiveness in reducing size and weight while maintaining electrical performance. On the other hand, Silicon Carbide (SiC) is emerging steadily due to its potential for high-voltage applications. The increased focus on renewable energy systems and electric vehicles is propelling SiC's growth, given its capability of withstanding higher operating temperatures and voltages compared to traditional silicon-based materials. This positions GaN as the preferred choice for cutting-edge applications, while SiC is carving a niche in high-demand sectors.

By Device Type: Transistors (Largest) vs. Diodes (Fastest-Growing)

In the GaN Semiconductor Devices Market, the leading segment by device type is Transistors, which holds the largest market share due to their extensive applications in power electronics and RF devices. Diodes are rapidly gaining traction as an emerging segment, driven by the demand for efficient switching capabilities and compact form factors. The overall distribution shows a significant tilt towards these two, with integrated circuits and power modules supporting the infrastructure of both segments, while optical devices remain specialized components in niche markets.

Transistors (Dominant) vs. Diodes (Emerging)

Transistors dominate the GaN Semiconductor Devices Market due to their unparalleled performance in high-frequency applications and superior thermal management capabilities, making them essential for various consumer electronics and industrial applications. In contrast, Diodes have emerged as a key player, primarily focusing on power efficiency in consumer devices and renewable energy systems. The growth of renewable energy sectors and the push for greener technologies are propelling diode adoption, positioning them as a critical component in future semiconductor innovations. This juxtaposition highlights how transistors maintain their leading position while diodes rapidly adapt to changing technological landscapes.

By Packaging Type: Surface Mount Device (Largest) vs. Ball Grid Array (Fastest-Growing)

In the GaN Semiconductor Devices Market, the packaging type segment demonstrates a diverse distribution, with Surface Mount Devices (SMD) commanding the largest share. These devices are favored for their compact size and ease of integration into various applications. In contrast, Ball Grid Array (BGA) packaging is rapidly gaining traction, attributed to its ability to support higher performance and thermal management, resulting in a growing segment share, particularly in advanced applications such as power electronics and RF amplifiers.

Packaging: SMD (Dominant) vs. BGA (Emerging)

Surface Mount Devices (SMD) are characterized by their flat, compact design, which allows for effective space utilization on circuit boards, making them the dominant choice in GaN semiconductor applications. Their compatibility with automated assembly processes not only streamlines production but also enhances overall efficiency. On the other hand, Ball Grid Array (BGA) packaging is emerging as a preferred option due to its superior heat dissipation and electrical performance. This has positioned BGA as a critical player in high-frequency and power applications, where efficiency and reliability are paramount.

Get more detailed insights about GaN Semiconductor Devices Market

Regional Insights

North America : Innovation and Growth Hub

North America is poised for significant growth in the GaN semiconductor devices market, projected to reach $4,000.0 million by December 2025. The region benefits from a robust demand for high-efficiency power solutions, driven by advancements in electric vehicles and renewable energy technologies. Regulatory support for clean energy initiatives further catalyzes market expansion, making it a key player in the global landscape. The competitive landscape in North America is dominated by major players such as Cree, Inc., Qorvo, and Texas Instruments. These companies are at the forefront of innovation, focusing on developing high-performance GaN devices. The U.S. and Canada are leading countries in this sector, with substantial investments in R&D and manufacturing capabilities, ensuring a strong foothold in the global market.

Europe : Emerging Market with Potential

Europe is witnessing a growing interest in GaN semiconductor devices, with a market size projected at $3,000.0 million by December 2025. The region's focus on energy efficiency and sustainability drives demand, particularly in automotive and industrial applications. Regulatory frameworks promoting green technologies are pivotal in shaping market dynamics, encouraging investments in GaN technology. Leading countries in Europe include Germany, France, and the Netherlands, where companies like STMicroelectronics and Nexperia are key players. The competitive landscape is characterized by a mix of established firms and innovative startups, fostering a vibrant ecosystem for GaN development. The region's commitment to reducing carbon emissions further enhances the growth prospects for GaN devices.

Asia-Pacific : Dominating Global Market Share

Asia-Pacific is the largest market for GaN semiconductor devices, with a projected size of $6,000.0 million by December 2025. The region's rapid industrialization and increasing adoption of electric vehicles are key growth drivers. Additionally, government initiatives supporting technological advancements in power electronics are crucial in fostering a conducive environment for market expansion. Countries like China, Japan, and South Korea are leading the charge in GaN technology, with significant contributions from companies such as GaN Systems and Transphorm. The competitive landscape is robust, with numerous players focusing on innovation and cost-effective solutions. The region's dominance in manufacturing capabilities further solidifies its position in The GaN Semiconductor Devices.

Middle East and Africa : Emerging Frontier for Technology

The Middle East and Africa region is gradually emerging in the GaN semiconductor devices market, with a projected size of $1,253.19 million by December 2025. The growth is driven by increasing investments in renewable energy and smart grid technologies. Regulatory support for energy-efficient solutions is also becoming more prominent, paving the way for GaN adoption in various applications. Countries like South Africa and the UAE are at the forefront of this emerging market, with a growing number of local and international players entering the landscape. The competitive environment is evolving, with a focus on establishing partnerships and collaborations to enhance technological capabilities. As the region continues to develop its infrastructure, the demand for GaN devices is expected to rise significantly.

GaN Semiconductor Devices Market Regional Image

Key Players and Competitive Insights

The GaN Semiconductor Devices Market is currently characterized by a dynamic competitive landscape, driven by the increasing demand for high-efficiency power solutions across various sectors, including automotive, telecommunications, and consumer electronics. Key players such as Infineon Technologies (DE), Cree, Inc. (US), and GaN Systems (CA) are strategically positioning themselves through innovation and partnerships. Infineon Technologies (DE) focuses on enhancing its product portfolio with advanced GaN solutions, while Cree, Inc. (US) emphasizes its commitment to sustainability and energy efficiency, thereby shaping the competitive environment through a blend of technological advancement and environmental responsibility.
In terms of business tactics, companies are increasingly localizing manufacturing to reduce lead times and optimize supply chains. The market structure appears moderately fragmented, with several players vying for market share. This fragmentation allows for a diverse range of products and innovations, yet the collective influence of major players like Texas Instruments (US) and STMicroelectronics (FR) is significant, as they leverage their extensive resources to drive market trends.
In November 2025, Cree, Inc. (US) announced a strategic partnership with a leading automotive manufacturer to develop next-generation electric vehicle (EV) charging solutions utilizing GaN technology. This collaboration is poised to enhance the efficiency and speed of EV charging, reflecting Cree's commitment to innovation in the automotive sector. Such partnerships not only bolster Cree's market position but also signify a broader trend towards integrating GaN technology in the rapidly evolving EV landscape.
In October 2025, GaN Systems (CA) launched a new line of GaN power transistors aimed at the telecommunications sector, specifically designed to improve the efficiency of 5G infrastructure. This product introduction underscores GaN Systems' focus on addressing the growing demands of high-frequency applications, thereby reinforcing its competitive edge in a market that is increasingly leaning towards high-performance solutions. The strategic importance of this move lies in its potential to capture a significant share of the burgeoning 5G market.
In September 2025, Infineon Technologies (DE) expanded its manufacturing capabilities in Europe, investing €100 million in a new facility dedicated to GaN technology. This expansion not only enhances Infineon's production capacity but also aligns with the European Union's push for semiconductor self-sufficiency. The strategic importance of this investment is multifaceted, as it positions Infineon to better serve the European market while also mitigating supply chain risks associated with global dependencies.
As of December 2025, the competitive trends in the GaN Semiconductor Devices Market are increasingly defined by digitalization, sustainability, and the integration of AI technologies. Strategic alliances are becoming more prevalent, as companies recognize the need to collaborate to enhance their technological capabilities and market reach. Looking ahead, competitive differentiation is likely to evolve from traditional price-based competition towards a focus on innovation, technological advancements, and supply chain reliability, suggesting a transformative shift in how companies position themselves in this rapidly changing market.

Key Companies in the GaN Semiconductor Devices Market include

Industry Developments

  • Q2 2024: Navitas Semiconductor Announces New GaNFast Power ICs for Data Centers and AI Systems Navitas Semiconductor launched its next-generation GaNFast power ICs designed for high-efficiency power conversion in data centers and AI computing systems, aiming to improve energy efficiency and reduce system size.
  • Q2 2024: Transphorm Announces Strategic Partnership with Weltrend for GaN Power Solutions Transphorm entered a strategic partnership with Weltrend Semiconductor to co-develop and commercialize GaN power solutions for fast chargers and adapters, targeting consumer electronics markets.
  • Q2 2024: Infineon opens new GaN power semiconductor facility in Austria Infineon Technologies inaugurated a new manufacturing facility in Villach, Austria, dedicated to the production of GaN power semiconductors, expanding its European manufacturing footprint.
  • Q2 2024: STMicroelectronics and Sanan Optoelectronics Open Joint GaN Device Manufacturing Plant in China STMicroelectronics and Sanan Optoelectronics officially opened a joint manufacturing plant in China focused on producing GaN power devices for automotive and industrial applications.
  • Q2 2024: GaN Systems Launches New 650V GaN Power Transistors for Electric Vehicles GaN Systems introduced a new line of 650V GaN power transistors specifically designed for electric vehicle powertrains, aiming to enhance efficiency and reduce weight in automotive applications.
  • Q3 2024: EPC Announces Release of eGaN FETs for 48V Automotive Power Systems Efficient Power Conversion (EPC) launched a new family of eGaN FETs optimized for 48V automotive power systems, targeting next-generation electric and hybrid vehicles.
  • Q3 2024: Transphorm Secures $20 Million Series E Funding to Expand GaN Production Transphorm raised $20 million in Series E funding to scale up its GaN device manufacturing capacity and accelerate product development for automotive and industrial markets.
  • Q3 2024: Navitas Semiconductor and Anker Sign Multi-Year Supply Agreement for GaN Power ICs Navitas Semiconductor signed a multi-year supply agreement with Anker Innovations to provide GaN power ICs for Anker’s next-generation fast chargers and consumer power products.
  • Q4 2024: Infineon Technologies acquires GaN Systems for $830 million Infineon Technologies completed the acquisition of GaN Systems, a Canadian GaN power device manufacturer, to strengthen its position in the global GaN semiconductor market.
  • Q4 2024: Wolfspeed Announces New GaN-on-SiC RF Devices for 5G Infrastructure Wolfspeed launched a new portfolio of GaN-on-SiC RF devices aimed at improving performance and efficiency in 5G wireless infrastructure applications.
  • Q1 2025: EPC Opens New GaN Device R&D Center in California Efficient Power Conversion (EPC) opened a new research and development center in California focused on advancing GaN device technology for automotive, industrial, and consumer applications.
  • Q1 2025: Transphorm Appoints New CEO to Lead Next Phase of GaN Growth Transphorm announced the appointment of a new Chief Executive Officer to drive the company’s next phase of growth in the GaN semiconductor device market.

Future Outlook

GaN Semiconductor Devices Market Future Outlook

The GaN Semiconductor Devices Market is projected to grow at a 20.83% CAGR from 2024 to 2035, driven by advancements in power electronics, renewable energy adoption, and electric vehicle demand.

New opportunities lie in:

  • Development of high-efficiency power converters for renewable energy systems.
  • Expansion into automotive applications for electric vehicle charging solutions.
  • Creation of compact, high-performance RF amplifiers for telecommunications.

By 2035, the GaN Semiconductor Devices Market is expected to achieve substantial growth and innovation.

Market Segmentation

GaN Semiconductor Devices Market End Use Outlook

  • Consumer Electronics
  • Telecommunications
  • Automotive
  • Aerospace
  • Industrial

GaN Semiconductor Devices Market Application Outlook

  • Power Electronics
  • Radio Frequency
  • Optoelectronics
  • Lighting
  • Electric Vehicles

GaN Semiconductor Devices Market Device Type Outlook

  • Transistors
  • Diodes
  • Integrated Circuits
  • Power Modules
  • Optical Devices

GaN Semiconductor Devices Market Material Type Outlook

  • Gallium Nitride
  • Silicon Carbide
  • Gallium Arsenide
  • Silicon
  • Other Materials

GaN Semiconductor Devices Market Packaging Type Outlook

  • Surface Mount Device
  • Through Hole
  • Chip on Board
  • Ball Grid Array
  • Other Packaging Types

Report Scope

MARKET SIZE 2024 13253.19(USD Million)
MARKET SIZE 2025 16014.1(USD Million)
MARKET SIZE 2035 106248.54(USD Million)
COMPOUND ANNUAL GROWTH RATE (CAGR) 20.83% (2025 - 2035)
REPORT COVERAGE Revenue Forecast, Competitive Landscape, Growth Factors, and Trends
BASE YEAR 2024
Market Forecast Period 2025 - 2035
Historical Data 2019 - 2024
Market Forecast Units USD Million
Key Companies Profiled Infineon Technologies (DE), Nexperia (NL), Cree, Inc. (US), GaN Systems (CA), Transphorm (US), Efficient Power Conversion (US), Qorvo (US), Texas Instruments (US), STMicroelectronics (FR)
Segments Covered Application, End Use, Material Type, Device Type, Packaging Type
Key Market Opportunities Growing demand for energy-efficient solutions drives innovation in the GaN Semiconductor Devices Market.
Key Market Dynamics Rising demand for energy-efficient solutions drives innovation and competition in the GaN semiconductor devices market.
Countries Covered North America, Europe, APAC, South America, MEA

Market Highlights

Author
Ankit Gupta
Senior Research Analyst

Ankit Gupta is an analyst in market research industry in ICT and SEMI industry. With post-graduation in "Telecom and Marketing Management" and graduation in "Electronics and Telecommunication" vertical he is well versed with recent development in ICT industry as a whole. Having worked on more than 150+ reports including consultation for fortune 500 companies such as Microsoft and Rio Tinto in identifying solutions with respect to business problems his opinions are inclined towards mixture of technical and managerial aspects.

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FAQs

How much is the GaN Semiconductor Devices Market?

The GaN Semiconductor Devices Market size is expected to be valued at USD 13253.19 billion in 2024.

The GaN Semiconductor Devices Market size is expected to be valued at USD 9408.5 Million in 2024.

The global market is projected to grow at a CAGR of 20.83% during the forecast period, 2025 to 2035.

Which region held the largest market share in the GaN Semiconductor Devices Market?

North America had the largest share of the global market.

Who are the key players in the GaN Semiconductor Devices Market?

The key players in the market are Fujitsu Ltd., Panasonic Coporation, Texas Instruments, Osram Opto-Semiconductors, Cree Incorporate, Toshiba, AixtronSE, Infineon Technologies, ROHM Company Limited, NXP Semiconductors, KoninklijkePhilips N.V., Qorvo, Efficient Power Conversion Corporation, Taiwan Semiconductor Manufacturing Company, Intel Corporation, GLOBALFOUNDRIES, Semiconductor Manufacturing International Corp., and Others.

Which vertical led the GaN Semiconductor Devices Market?

The Consumer Electronics category dominated the market in 2022.

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