ID: MRFR/SEM/0668-HCR | 100 Pages | Published By Ankit Gupta on March 2023
GaN Semiconductor Devices Market Size was valued at USD 2.14 Billion in 2021. The GaN Semiconductor Devices industry is projected to grow from USD 2.47 Billion in 2022 to USD 29.6 Billion by 2030, exhibiting a compound annual growth rate (CAGR) of 5.8% during the forecast period (2022 - 2030). The market is likely to attract massive demand owing to its usage in a different range of semiconductor devices. It is projected to substitute silicon due to low power consumption and increase energy efficiency. The massive technological advances and increased demand for different types of wireless communication are most probably to compel the requirement for energy-efficient systems.
Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review
Increase in usage in the communication and healthcare sectors
GaN is a silicon alternative because of its superior efficiency and lower power consumption, and its demand and use have increased in the healthcare sector. As a result, the demand for gallium nitride semiconductor devices is anticipated to increase significantly. Hospital robots do delicate procedures using parts made of gallium nitride. MRI, sonograms, and miniature x-ray machines are just a few examples of scanning systems that employ GaN-based semiconductors and components to give accurate positioning capabilities that are useful for performing procedures.
The market segmentation, based on Types, includes Gallium Nitride, Power Semiconductors, Opto Semiconductors, and RF semiconductors. The Opto Semiconductors segment holds the majority share in 2021 of the market. This can be largely attributed to the application of opto-semiconductors in devices such as LEDs, solar cells, photodiodes, lasers, and optoelectronics.
Based on Size, the market segmentation includes 2 Inches, 3 Inches, and 6 Inches. The 3 Inches segment is accounted for the largest share of the market. This is because 3-inch wafers facilitate the large-scale production of semiconductor devices. The implementation of 3-inch wafers is increasing rapidly as these wafers help overcome the limitations of 2-inch wafers and are widely used in semiconductor product-based industries.
Based on Device Type, the market segmentation includes CDiode, Modern Transistors, Power ICs, Amplifiers, and Power Drivers. The Power ICs segment is accounted for the largest share of the market. The segment growth can be attributed to the increasing usage of GaN-based power ICs that offer features such as efficient navigation, collision avoidance, and real-time air traffic control.
Based on End Users, the market segmentation includes Advanced Aerospace and Defence, Modern Automotive, and Medical. The Modern Automotive segment dominated the market in 2021. The automotive sector is increasingly utilizing opto-semiconductors in automotive lights, indoor and outdoor lighting, and pulse-powered laser. This is subsequently propelling the adoption of opto-semiconductors in the automotive and consumer electronics industries.
Figure 2: GaN Semiconductor Devices Market, by Types, 2021 & 2030 (USD Billion)
Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review
By region, the study provides market insights into North America, Europe, Asia-Pacific, and the Rest of the World. North America is leading. The U.S. owns the biggest portion of revenue in the region because of its advanced and modern technological infrastructure, and the existence of many large numbers of manufacturers is projected to grow the market over the forecast period. The Asia Pacific region is showing a substantial growth in the market after the North American region. China, Taiwan, Japan, and the Republic of Korea are other prominent countries in the market as they have government agencies that constantly promote these markets.
Further, the major countries studied in the market report are The U.S., Canada, Germany, France, the UK, Italy, Spain, China, Japan, India, Australia, South Korea, and Brazil.
Figure 3: GaN Semiconductor Devices Market SHARE BY REGION 2021 (%)
Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review
The major market players are investing a lot of money in R&D to expand their product lines, which will spur further market growth. With significant market development such as new product releases, increased investments, and collaboration with other organizations, market participants are also undertaking various strategic activities to expand their global presence. To grow and thrive in a market climate that is becoming more competitive and growing, competitors in the GaN Semiconductor Devices industry must offer affordable products.
Manufacturing locally to cut operating costs is one of the main business tactics manufacturers use in the global GaN Semiconductor Devices industry to benefit customers and expand the market sector. Major market players, including Infineon Technologies, Gallia Semiconductor, ROHM Company Limited, NXP Semiconductors, Koninklijke Philips, and others, are attempting to increase market demand by funding R&D initiatives.
A firm called Infineon Technologies creates, develops, produces, and sells semiconductor products. Power modules, sensors, wireless control systems, automotive and industrial transceivers, tiny signal transistors and diodes, power delivery controllers, etc. are among the products it offers. The business provides services to the industrial, automotive, communication, and security industry sectors, among others.
Gallia Semiconductor intends to provide substrate architectures made of gallium nitride (GaN) for the markets of wide band-gap semiconductors and LEDs (light-emitting diodes). The thin nucleation layer, buffer layer, and GaN layer are epitaxially grown on Si to be used as templates for the LED industry, and further layers as substrates for the power semiconductor sector. By 2018, it intends to offer commercial samples of GaN on Si. It asserts that their technique would dramatically lower the price of power semiconductors.
RF Micro Devices Corporation
Osram Opto-semiconductors
Cree Incorporated
Aixtron SE
Infineon Technologies
Gallia Semiconductor
ROHM Company Limited
Koninklijke Philips
Nichia Corporation
May 2021: Infineon Technologies launched a new portfolio. integrated power stage (IPS) GaN power devices. The new family of CoolGaN devices included half-bridge and single-channel products meant for low-to-medium power applications, including adapters, chargers, and motor drives.
March 2021: Cree launched 4 new multi-stage GaN-on-SiC monolithic microwave integrated circuit (MMIC) devices. The newly launched products extended the company's range of RF solutions and deliver high power-added efficiency (PAE) in small, industry-standard packages. These products are designed for a wide array of pulsed and continuous-wave X-band phased array applications, including weather surveillance, marine, and unmanned aerial system radars.
Gallium Nitride
Power Semiconductors
Opto Semiconductors
RF semiconductors
2 Inches
3 Inches
6 Inches
Diode
Modern Transistors
Power ICs
Amplifiers
Power Drivers
Advanced Aerospace and Defence
Modern Automotive
Medical
North America
Europe
Asia-Pacific
China
Japan
India
Australia
South Korea
Australia
Rest of Asia-Pacific
Rest of the World
Middle East
Africa
Latin America
Report Attribute/Metric | Details |
Market Size 2021 | USD 2.14 Billion |
Market Size 2022 | USD 2.47 Billion |
Market Size 2030 | USD 29.6 Billion |
Compound Annual Growth Rate (CAGR) | 5.8% (2022-2030) |
Base Year | 2021 |
Market Forecast Period | 2022-2030 |
Historical Data | 2018 & 2020 |
Market Forecast Units | Value (USD Million) |
Report Coverage | Revenue Forecast, Market Competitive Landscape, Growth Factors, and Trends |
Segments Covered | Types, Size, Device Type, End Users, and Region |
Geographies Covered | North America, Europe, Asia Pacific, and Rest of the World |
Countries Covered | The U.S, Canada, Germany, France, UK, Italy, Spain, China, Japan, India, Australia, South Korea, and Brazil |
Key Companies Profiled | RF Micro Devices Corporation, Osram Opto-semiconductors, Cree Incorporated, Toshiba, Aixtron SE, Infineon Technologies, Gallia Semiconductor, ROHM Company Limited, NXP Semiconductors, Koninklijke Philips, Nichia Corporation |
Key Market Opportunities | Improving standards of the latest and advanced GaN technology. |
Key Market Dynamics | Rising demand for wireless communications and high bandwidth speeds. The increased integration in LEDs, private home battery chargers, and other modern active devices. |
The GaN Semiconductor Devices Market size was valued at USD 2.14 Billion in 2021.
The global market is projected to grow at a CAGR of 5.8% during the forecast period, 2022-2030.
North America had the largest share of the GaN Semiconductor Devices Market.
The key players in the market are RF Micro Devices Corporation, Osram Opto-semiconductors, Cree Incorporated, Toshiba, Aixtron SE, Infineon Technologies, Gallia Semiconductor, ROHM Company Limited, NXP Semiconductors, Koninklijke Philips, Nichia Corporation.
The Opto Semiconductors category dominated the market in 2021.
Modern Automotive had the largest share in the global market for GaN Semiconductor Devices.