RF GaN Market: Information by Type (Gan on Sic, Gan on Silicon, Gan on Demand), Application (5G Wireless Infrastructure, Aerospace, Military & Defence, Others), and Region (North America, Europe, Asia-Pacific, Middle East & Africa, and South America)—Forecast till 2030

RF GaN Market Overview:

The global RF GaN market is estimated to register a CAGR of over 20.7% to reach USD 4,659.0  Million by the end of 2030.

GaN transistors are increasingly finding application in radio frequency applications as they offer optimum solutions for simultaneous high power, high frequency, and high-temperature operation. GaN RF devices are primarily used for enabling wireless infrastructure for cell phones, radio and television broadcasting, MRI machines, radar, space and satellite communications, as well as military communications. RF GaN technology is also suitable for 5G or advanced 4G systems, as it works at higher frequency ranges.

The past decade has witnessed significant growth in the RF GaN market which has reshaped the RF power devices landscape. Demand for RF amplifiers with high rate of data transmission, higher frequency and power has led to the development in GaN RF device technology. The various factors attributing to the growth of the global RF GaN market are increasing adoption of RF GaN power devices for energy & power applications and rise in demand for IT & telecommunication equipment that use RF GaN power devices. Furthermore, innovation in linearization and power efficiency of RF power amplifiers will create opportunities for market players during the forecast period

Opportunities for Global RF GaN Market:

Despite 4G technology wireless systems' existing great performance and dependability, the telecoms industry and academics are exploring new methods to increase data rates, connection density, and latencies by creating next-generation 5G wireless standards and future network topologies. 5G wireless communication technologies are expected to achieve user-experienced data rates ranging from 100 Mbps to 1 Gbps, reliable connection densities of up to 1 million per square kilometer, end-to-end latency in the millisecond range, frequency bandwidths of up to 150 MHz, and mobility of up to 500 km/h. The goal characteristics are expected to be reached utilizing sub-6 GHz/cm-Wave/mm-Wave spectrum frequency carriers, spectrally efficient modulation waveforms, and a high number of beamforming antennas for massive MIMO, as well as fast advancing GaN, GaAs, SiGe, and Si-LDMOS technologies.

Market Dynamics:

Drivers:

Currently, gallium nitride (GaN) has been extensively used in radio frequency (RF) and microwave applications to enhance the performance of various devices. GaN is nearly 10% more efficient than laterally diffused MOSFET (LDMOS) which helps in significant energy savings at power levels of 600W or more. Furthermore, GaN materials are highly efficient, which allows them to offer superior system reliability. GaN-on-Si devices are used in solid-state RF energy systems as they offer an ideal balance of performance, reliability, and power efficiency with an affordable cost structure at production levels. MACOM, one of the leading companies operating in the RF GaN market, provides an RF energy toolkit with a software package that offers designers, complete control over the network and the high-performing amplifiers. This toolkit allows designers to determine the path of RF energy delivered to different applications. This toolkit is used to create reliable products; it also helps to debug and analyze the advantages of different electrical frequencies and parameters in various applications without the need for a big design team.

Opportunities:

Currently, gallium nitride (GaN) has been extensively used in radio frequency (RF) and microwave applications to enhance the performance of various devices. GaN is nearly 10% more efficient than laterally diffused MOSFET (LDMOS) which helps in significant energy savings at power levels 600W or more. Furthermore, GaN materials are highly efficient, which allows them to offer superior system reliability. GaN-on-Si devices are used in solid-state RF energy systems as they offer an ideal balance of performance, reliability, and power efficiency with an affordable cost structure at production levels. MACOM, one of the leading companies operating in the RF GaN market, provides an RF energy toolkit with a software package that offers designers, complete control over the network and the high-performing amplifiers. This toolkit allows designers to determine the path of RF energy delivered to different applications. This toolkit is used to create reliable products; it also helps to debug and analyze the advantages of different electrical frequencies and parameters in various applications without the need for a big design team.

Restraint:

Both SiC and gallium nitride (GaN) exhibit properties that are significantly superior to Si for RF and switching power devices. The high critical field of both SiC and GaN allows electronic devices to operate at lower leakage currents and higher voltages. SiC has higher electron mobility than Si, whereas GaN operates on even higher mobility than SiC; hence, GaN is preferred for devices operating on very high frequencies. SiC has the highest thermal conductivity which can be combined with a high critical field and wide bandgap of GaN to provide high power to electronic devices.

Value Chain Analysis

The market for RF GaN s is expanding, and it is likely to grow considerably in the near future. The RF GaN market's value chain comprises three primary levels:  material suppliers, OEMs, distributors & retailers, and end users.

Segment Overview

The global RF GaN market has been segmented on the basis of type, application, and region.

The global RF GaN market, based on type, has been segmented into GaN on Sic, GaN on Silicon, and GaN on Demand. The GaN on sic segment accounted for the largest market share in 2021 and is estimated to register a CAGR of 21.6 % during the review period.

The global RF GaN market, based on Application, has been segmented into 5G Wireless Infrastructure, Aerospace, Military and Defence, and Others.

Regional Analysis

The global RF GaN market has been studied across Asia-Pacific, North America, Europe, Middle East & Africa, and South America.

North America accounted for the largest market share of 36% in 2021 due to the presence of notable RF GaN companies. The major players in RF GaN have been working on the technology for well over 15 years, and they have amassed a sizable body of knowledge, skill, and competence. But most importantly, they have developed an almost fervent feeling of faith in the long-term potential of the technology.

Europe has been segmented into four countries: the UK, Germany, France, Italy, and the rest of Europe. Some of the factors responsible for the market growth include increased demand for IT & telecommunication equipment and the adoption of energy & power applications. By 2040 or before, all automobiles will be emission-free in several European Union nations, including the United Kingdom (air quality). In this instance, the drive for the development of autonomous cars and drones, along with the necessary infrastructure provisions, further support the demand for RF GaN technology

Asia-Pacific has been further segmented into China, Japan, India, South Korea, Rest of Asia-Pacific. APAC is another promising market for RF GaN. The deployment of 5G networks in various regions of the region, as well as the use of RF GaN devices in electric cars, are driving market expansion. The area is a center for automotive, aerospace, and semiconductor technology

Competitive Landscape

The global market for RF GaN s is projected to witness healthy growth during the forecast period, owing to increased adoption of energy & power application and increased demand for IT and Telecommunication equipment.  

Key players operating in the global RF GaN market include NXP Semiconductors (Netherlands), Analog Devices, Inc.(US), ST Microelectronics N.V. (Switzerland), Toshiba Corporation (Japan), ROHM Company Ltd (Japan), Wolfspeed, Inc.(US), Aethercomm Inc. (US), Microchip Technology (US), Raytheon Company (US), Qorvo, Inc. (US), Mitsubishi Electric Corporation (Japan), RFHIC Corporation (South Korea), Mercury System Inc (US), Sumitomo Electric Industries, Ltd. (Japan), MACOM (US), and Integra Technologies, Inc. (US),

Recent Developments

NXP Semiconductors launched A3G26D055N Airfast GaN RF Transistor. The Airfast GaN A3G26D055N is a 55 W peak GaN discrete transistor, housed in a compact DFN 7 x 6.5 mm over-molded plastic package. On September 2021

STMicroelectronics and MACOM a US-based technology company announced the successful production of radio-frequency Gallium-Nitride-on Silicon (RF GaN-on-Si) prototypes for application in 5G and 6G infrastructure. On may 2022

Sumitomo Electric Industries, Ltd. and its Group company Sumitomo Electric Device Innovations USA, Inc., introduced Sumitomo Electric’s line of high-power gallium nitride (GaN) products for X-Band radar applications for Ground-based and shipborne radars. On November 2021

MACOM introduced a new GaN-on-Silicon Carbide (SiC) Power Amplifier Product Line. The new products in the product line are MAPC-A1000 and MAPC-A1100. This has broden the portfolio and enhanced the capability of the existing RF Power product portfolio. On June 2021

Report Overview

As per MRFR, the global RF GaN market has been growing significantly over the past few years. The global RF GaN market has been segmented on the basis of type, application, and region. Based on region, the graphical user interface design software market has been segmented into North America, Europe, Asia-Pacific, the Middle East & Africa, and South America.

Objective of the Study

• To provide a comprehensive analysis of the RF GaN market and its sub-segments, thereby providing a detailed structure of the industry


• To provide detailed insights into factors driving and restraining the growth of the global RF GaN market


• To estimate the size of the global RF GaN s market where 2018 to 2020 would be the historical period, 2021 shall be the base year, and 2022 to 2030 will be the forecast period for the study


• To analyze the global RF GaN s market in five main regions, namely, North America, Europe, Asia-Pacific, the Middle East & Africa, and South America


• To provide country-wise market value analysis for various segments of the RF GaN market


• To provide strategic profiling of key companies present across the globe and comprehensively analyze their competitiveness/competitive landscape in this market


• To provide a value chain for the RF GaN market

Scope of the Report

The scope of the global RF GaN market study includes the market size analysis and a detailed analysis of the vendor’s products and strategies. The global RF GaN market has been segmented on the basis of type, application and region.

Intended Audience

• RF GaN Administrators


• RF GaN manufacturers and providers


• RF GaN system integrators


• Automobile industry


• Software integrators


• IT enterprises


• Technology investors


• Regulatory industries


• Government bodies