Global RF GaN Market is projected to expand at 21.6% CAGR over the forecast period (2018-2023), according to Market Research Future (MRFR) in its latest report. Gallium nitride (GaN) is likely to attract huge demand owing to its utilization in a range of semiconductor devices. It is estimated to replace silicon owing to low power consumption and high energy efficiency. Rapid technological advances and huge demand for wireless communication is likely to compel the need for energy-efficient systems. Rollout of new communication technologies and focus of manufacturers in improving the current GaN technology can provide new opportunities to the market.
The COVID-19 pandemic has negatively impacted the RF GaN market growth owing to shutdown of production of major manufacturing plants. In addition, the shutdown of electronics and automotive sectors temporarily for curbing the spread of the disease has dampened the market prospects. Trade tensions and agreements between nations are expected to affect the market.
The decline in power semiconductors and power ICs demand in 2020 is expected to recover by 2021 owing to policies encouraging the production of hybrid and electric vehicles. The gradual opening of economies is estimated to positively impact the global RF GaN market positively. Rising demand of power semiconductors in 2021 can bolster the market revenues. Development of recovery scenarios by companies to create a zero-sum situation can save them from any future unforeseen circumstances. Wireless and home office applications are deemed to accumulate revenues for the market after 2021.
Increasing Adoption of Energy and Power Applications
The preference of GaN material for energy and power applications is likely to favor the market growth. This is evident by its integration in LEDs, home battery chargers, and other active devices. The huge capacity of GaN in terms of efficiency and power density and advantage over silicon and gallium arsenide manufactured semiconductors can drive the global RF GaN market growth. Demand for wireless communications and high bandwidth speeds will provide an impetus to market demand. Presence of various telecommunication companies and rollout of 5G will support the industry. GaN semiconductors can generate large voltages with minimal variations in conductivity making them optimal in switching devices. MACOM and Qorvo are developing GaN-on-Si semiconductors for catering to the demand for energy-efficient devices.
Efficiency of RF Power Amplifiers
The focus on power consumption and power efficiency by semiconductor device manufacturers is likely to culminate in production of GaN power amplifiers. The growth of RF portable devices and increasing functionality can induce the need for power amplifiers. Their integration in smartphones and personal digital assistants can drive the demand for GaN material in the coming years. The boost to electric vehicle supply equipment such as charging kiosks and charging stations are anticipated to drive the innovation in RF power amplifiers. Emergence of autonomous vehicles can provide a golden opportunity for players in the RF GaN industry.
Threat from SiC Devices
Silicon carbide (SiC) devices are a viable alternative to RF GaN devices owing to the demand for long battery life and demand for technologies to operate at high frequencies and voltages. Emerging demand for wideband technologies in smartphones such as precision locating, tracking, and sensor data collection can drive its demand and threaten the growth prospects of the RF GaN industry. The switch of semiconductor companies to SiC owing to its low cost can pose a problem to the market.
By Material Type
GaN-on-SiC to Command Huge Demand
The GaN-on-SiC segment accounted for the largest market share in 2017 with a value of USD 246.2 million in 2017. The applications of the material across aerospace & defense and telecom sectors can drive the segment demand. They are employed in RF GaN systems due to its ability to handle high power output, thermal conductivity, reliability, and cut-off frequency.
IT & Telecommunication to Rule Market Revenues
The IT & telecommunication sector is anticipated to generate huge revenue to the global RF GaN market owing to application of gallium nitride powered devices. RF amplifiers capable of working at high frequencies, high data transmission rate, and huge power output will be preferred in the sector owing to the ubiquitousness of the wireless cellular sector. The use of GaN hybrids with advanced algorithms and mixed-signal silicon are able to provide high bandwidth speeds with high performance and minimum power consumption. Innovation in linearization of cable technologies can provide opportunities to the market.
APAC to Register Fastest Growth Rate
The APAC RF GaN market is anticipated to peak by exhibiting 22.82% CAGR over the forecast period. This is attributed to the growing disposable income levels of customers in China, India, and Japan. Launch of 5G networks and adoption of the material in electric vehicles can drive the market demand. Huge market for energy-efficient electronics and technological breakthroughs in RF components can bode well for the market. China is anticipated to deliver at 24.8% CAGR over the forecast period.
Global RF GaN Market is open to players of all sizes. The focus on product innovation and pandering to IT & telecom, aerospace, defense, and military applications are likely to provide players with a first mover advantage. Power efficiency and extended coverage are features that are bound to gain attraction. Players are showcasing their products at exhibitions and trade shows to attract new clients. Collaborations and partnerships are gaining speed as semiconductor manufacturers aim to gain constant demand from end-use industries that can sustain their position. MACOM is manufacturing packages and amplifiers for wireless cellular stations. On the other hand, Microsemi Corporation is developing RF power semiconductors with S and L band pulsed radar amplifiers.
Aethercomm Inc. (U.S.), ROHM Semiconductors (Japan), Analog Devices Inc. (U.S.), NXP Semiconductors NV (Netherlands), STMicroelectronics NV (Switzerland), Toshiba Corporation (Japan), Cree Inc. (U.S.), and others are prominent names of the global RF GaN market.
The global RF GaN market report by MRFR looks at rising trends, developments, and hurdles to be faced by industry leaders during the forecast period. It assesses market variables for predicting market growth and revenue trajectories. Primary and secondary research is conducted by analysts and cross-checked with trusted organizations and online databases for its veracity. It is segmented in the following manner:
By Material Type
|Market Size||Significant Value|
|Forecast Units||Value (USD Million)|
|Report Coverage||Revenue Forecast, Competitive Landscape, Growth Factors, and Trends|
|Segments Covered||Type, Application|
|Geographies Covered||North America, Europe, Asia-Pacific, and Rest of the World (RoW)|
|Key Vendors||Aethercomm Inc. (U.S.), ROHM Semiconductors (Japan), Analog Devices Inc. (U.S.), NXP Semiconductors NV (Netherlands), STMicroelectronics NV (Switzerland), Toshiba Corporation (Japan), Cree Inc. (U.S.)|
|Key Market Opportunities||Rollout of new communication technologies and focus of manufacturers in improving the current GaN technology.|
|Key Market Drivers||
Frequently Asked Questions (FAQ) :
By 2023, at 21.6% CAGR, the worldwide market of RF GaN is expected to value at USD 1295.5 million.
STMicroelectronics NV (Switzerland), ROHM Semiconductors (Japan), and Toshiba Corporation (Japan) are some reputed manufacturers of RF GaN.
GaN-On-SiC, GaN-On-Diamond, and GaN-On-Silicon are types of RF GaN.
At 21.6% CAGR, the GaN-On-SiC type segment of the market can generate turnover that can exceed USD 240 Mn by 2023.
In 2017, the RF GaN market valued at USD 415.3 Mn.
The North America RF GaN market is expected to surge at 22.0% CAGR and value at exceed a valuation of USD 160 Mn by 2023.
The IT and telecommunication industry is a high end-user of RF GaN. Other end-users are military and defense, and aerospace.