RF GaN Market Research Report - Global Forecast till 2030

RF GaN Market Research Report: By Type (GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond), By Application (IT & Telecomm, Aerospace, Military & Defense and Others), By Region - Forecast till 2030

ID: MRFR/SEM/5017-CR | July 2019 | Region: Global | 103 pages         

RF GaN Market

RF GaN Market is projected to reach 5.2 billion, at 31% CAGR over the forecast period (2020-2030)

Segmentation

By Type GaN-On-SiC GaN-On-Silicon GaN-On-Diamond
By Application IT & Telecomm Aerospace Military & Defense
By Region North America Asia-Pacific Europe Rest of the World

Key Players

  • Aethercomm Inc. (U.S.)
  • ROHM Semiconductors (Japan)
  • Analog Devices Inc. (U.S.)
  • NXP Semiconductors NV (Netherlands)
  • STMicroelectronics NV (Switzerland)
  • Toshiba Corporation (Japan)
  • Cree Inc. (U.S.)

Drivers

  • The increased demand for IT & telecommunication equipment
  • Adoption of energy & power applications
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RF GaN Market


The RF GaN market has been expected to increase at a CAGR of 21.6%, with a value of USD 1,295.5 million over the projected period of 2020-2027.


The increasing adoption of RF GaN in electric automotive is also one of the significant factors that drive the demand of the market. The Silicon carbide devices are already in use in the onboard battery chargers of the electric buses, taxis, lorries, and passenger cars. Additionally, the increasing government regulations in favour of the electric vehicles market globally are further stimulating the demand of the RF GaN market sectors all around the world.


Artificial intelligence, augmented reality, and other sensing technologies require low latency for various applications like mission-critical end-use applications. This is expected to drive the demand for RF GaN devices further. Through strategic partnerships, research and development, and mergers and acquisitions, some of the major players in the industry have been able to further the technology, hence driving the market growth over the forecasting period. The increasing implementation of the IOT devices will signal congestion. It will demand the use of the GaNtechnology that can amplify the power, capacity, and bandwidth required for communicating with all interconnected devices. The 5th generation technology is expected to unleash the massive IOT ecosystem that would increase the user-based manifold. 


RF GaN Market Covid 19 Analysis:


The uncertain outbreak of the Covid 19 pandemics has led to hinder the growth of several industrial markets and the RF GaN Industry is one of them. The strict implementation of lockdown during the pandemics in almost every nation affected the import and export events of RF Gan. Covid 19 pandemics directly affected the demand and production and disrupted the market and supply chain that hampers the international RF GaN Market size.


Another effect is the financial impacts on the financial markets and enterprises that hinder international growth. However, the RF GaN Market Analysis depicts that the international market will provide compensable predictions for the producers after the Covid 19 pandemics ends. The global market will steadily develop and will hinder all the restrictions in the forthcoming forecasting years.


Market Dynamics:


Market dynamics are the prime factors that influence the international market of any enterprise or organization. It includes a detailed analysis of market drivers, opportunities, restraints, challenges, and other important responsible factors.


Drivers:


The first and foremost driving factor that increases the global RF Gallium nitride Industry is the increasing demands for IT and Telecommunication tools as well as the 5G Technologies. With an increasing demand in this sector, the market tends to rise with a positive growth rate in upcoming years. Another developing factor that will help the RF GaN manufacturers to boost their market is the wide-range adoption of energy and power applications during the forecast period. The development and acceptance of wireless technologies are other important factors that boost the international market.


According to the forecast report, the growth in RF power amplifiers and the adaption of electric vehicles will also drive the international RF Gallium Nitride (GaN) Market. Developments in defense equipment and tools also increase the need for high-power semiconductors such as RF Gan Device Market. These factors are the reasons for developing the market share in the forthcoming forecasting years.


Opportunities:


Growing demand for 5G technology and automation advancements are the vital factors that lead to the RF Gan Market opportunities. An increase in the use of transmitter circuits in a wide range of products and services is another factor of opportunity. The RF GaN technology offers higher frequencies and thus is it essential in the 5G and advance 4G systems too. Also, the growing demands for these devices in the defense industries act as an opportunity to increase the market share in the upcoming years.


Restraints:


The main restraining factor for the RF GaN Market Size is the huge competition from the Silicon Carbide technologies that can hamper the growth of the international market. Other important factors that hinder the positive effects in the international market are huge cost involvements in the raw materials. Moreover, the high-cost investments in the production processes are another restraining factor that hampers the development of the international market. Thus, it is essential to overcome these situations to gain international growth.


Challenges:


Despite several growth and benefits of RF GaN Technology, such as frequency and high power, some major technical challenges can hamper the growth. The RF GaN companies face problems in developing the GaN epitaxial films. In the native manufacturing process of GaN substrate, there is a need for another substrate of Heteroepitaxial development.


Due to the lack of thermal conductivity, the substrate materials become very critical during the manufacturing procedures. This can lead to framework disparity with the GaN and thus it is a major challenge.


Cumulative Growth Analysis:


The increasing demands for IT and telecommunications and 5G technologies will tend to rise the RF GaN Market Share. The market share is expected to grow with a compound annual growth of 31%. With this rapid growth percentage, the overall market share is expected to rise at 5.2 Billion US Dollars during the forecasting period 2030. Also, the need in the defense sectors will become another important factor leading to the growth and development of the international market.


Value Chain Analysis:


With an upsurge and development in IT and telecommunication and technological advancements, the need for RF GaN technology will also increase. The automation needs and the wide range acceptance of RF amplifiers and electric vehicles in the upcoming years will propel growth in the international market. The involvement of more wireless technology and its wide range acceptance will boost the market globally.


RF GaN Market Segment Overview:


Several types of market segmentation are present in the RF GaN Market growth according to the market research. These are typically based on the material type, Device, region, and application.


By Material Type:



  • GaN-On-Silicon

  • GaN-On-SiC


By Device:



  • Front End Modules

  • HEMT

  • Switches

  • MMIC

  • SART

  • Others


By Region:



  • North America

  • South America

  • Europe

  • Asia Pacific

  • Rest of the World


By Application:



  • Aerospace

  • Defense and Military

  • IT and Telecommunication

  • Wireless Infrastructure

  • Others


RF GaN Market Regional Analysis:


According to the RF GaN Market Analysis, the regional analysis of the RF GaN Market covers North America, Europe, Asia Pacific, and the Rest of the World. It is estimated that North America will dominate the market during the forecast period as it consists of international RF GaN companies. It is the most contributing region in the market due to the huge demands in the defense and military sectors.


Also, the end-users of North America are well known for the updated RF GaN Market Trends and technologies in the market. There is also an expectation that the Asia Pacific region will show an increase in the CAGR of 22.82% during the forecast period. This is due to the increasing demands and wide-range acceptance of electric vehicles and 5G cellular networks in this region.


RF GaN Market Competitive Landscape:


The competitive landscapes depict the information about the rivalry among the key players in the RF GaN Market growth. The upcoming competitive industries and startups with their innovative technics and capabilities have offered to lead the global market development. The key players with their research and developments, collaborations, strategic partnerships, and achievements can attain a strong place in the market.


Some of the leading RF GaN Market Key players that offers competitive benefits to other players are as under:



  • NXP Semiconductors NV

  • STMicroelectronics NV

  • Analog Devisces Inc.

  • Cree Inc.

  • Toshiba Corporation

  • ROHM Semiconductors

  • Aethercomm Inc.

  • Microchip Corporation

  • Qorvo Inc.

  • Raytheon Company


Recent Developments:


July 2020



  • In July 2020, Mitsubishi Electric Corporation developed the new technology to realize a gallium nitride power amplifier module for 5G base stations that offer a combination of a compact footprint and the extra-high power efficiency, exceeding an unprecedented rating of 43%. The module uses a minimum number of chip components in the matching circuit to control the high-quality signal output that is expected to assist the realization of 5th generation base stations that are widely deployed and highly power efficient.


Report Overview:


Under this report, there is a detailed analysis of several market dynamics consisting of drivers, opportunities, challenges, restraints that leads to rising in the RF GaN market. Plus, the other factors that are mentioned in this research report are pandemics effects and market segmentation, etc. The resources used in the report are taken from primary and secondary sources.


Report Detail:



  • Historic Period: 2020-2030

  • Base Year: 2020

  • Forecast Period: 2020-2030


Geographic Distributions:


  • Europe

  • North America

  • South America

  • Asia Pacific

  • Rest of the World



Report Scope:
Report Attribute/Metric Details
  Market Size   USD 5.2 Billion
  CAGR   31%
  Base Year   2019
  Forecast Period   2020-2030
  Historical Data   2018
  Forecast Units   Value (USD Million)
  Report Coverage   Revenue Forecast, Competitive Landscape, Growth Factors, and Trends
  Segments Covered   Type, Application
  Geographies Covered   North America, Europe, Asia-Pacific, and Rest of the World (RoW)
  Key Vendors   Aethercomm Inc. (U.S.), ROHM Semiconductors (Japan), Analog Devices Inc. (U.S.), NXP Semiconductors NV (Netherlands), STMicroelectronics NV (Switzerland), Toshiba Corporation (Japan), Cree Inc. (U.S.)
  Key Market Opportunities   Rollout of new communication technologies and focus of manufacturers in improving the current GaN technology.
  Key Market Drivers

  • The increased demand for IT & telecommunication equipment.
  • Adoption of energy & power applications.


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    Frequently Asked Questions (FAQ) :

    By 2030, at 31% CAGR, the worldwide market of RF GaN is expected to value at USD 5.2 Billion.

    STMicroelectronics NV (Switzerland), ROHM Semiconductors (Japan), and Toshiba Corporation (Japan) are some reputed manufacturers of RF GaN.

    GaN-On-SiC, GaN-On-Diamond, and GaN-On-Silicon are types of RF GaN.

    At 31% CAGR, the GaN-On-SiC type segment of the market can generate turnover that can exceed USD 5.2 Billion by 2030.

    In 2017, the RF GaN market valued at USD 415.3 Mn.

    The North America RF GaN market is expected to surge at 22.0% CAGR and value at exceed a valuation of USD 160 Mn by 2023.

    The IT and telecommunication industry is a high end-user of RF GaN. Other end-users are military and defense, and aerospace.