ID: MRFR/SEM/7192-HCR | February 2021 | Region: Global | 111 pages
Global RF GaN Semiconductor Device Market is estimated to reach USD 1,607.23 Million by 2025, registering a CAGR of 20.3% during the forecast period of 2019–2025.
RF GaN is one of the emerging technologies for power electronics applications that require high-power density RF performance. There are various products and services which use RF-based power amplifiers in their transmitter circuitry. GaN has a large bandgap due to which the GaN material has a high breakdown field, allowing the GaN device to function at higher voltages than usual semiconductor devices.
RF GaN semiconductor device plays a vital role in wireless infrastructure for cell phones, radio and television broadcasting, MRI machines, radar, space and satellite communications, as well as military communications. Moreover, the increasing demand for RF GaN devices for IT & telecommunication equipment is a key driver for the market during the forecast period. Presently, gallium nitride (GaN) has been extensively used in radio frequency (RF) and microwave applications to enhance the performance of various devices. GaN is nearly 10% more efficient than laterally diffused MOSFET (LDMOS) which helps in significant energy savings at the power level of 600W or more which is considered as a major factor driving the market. Additionally, companies are investing heavily in the development of innovative devices for various applications. For, instance NXP Semiconductors has developed various wireless applications such as HF (high frequency), VHF (very high frequency), and UHF (ultra-high frequency) radar (1–1000 MHz), S-band radar, avionics, and L-band radar with the help of RF GaN semiconductor devices.
The Global RF GaN Semiconductor Device Market has been segmented based on Material, Applications, End-User, and Region.
By Material, the market has been segmented into GaN-On-Sic, GaN-On-Silicon, and GaN-On-Diamond.
By Application, the market has been segmented into wireless infrastructure, power storage, satellite communication, PV inverter, and others
By End-User, the market has been segmented into aerospace & defense, IT & telecom, consumer electronics, automotive, and others
By Region, the market has been segmented into North America, Europe, Asia-Pacific, and the rest of the world.
Global RF GaN Semiconductor Device Market, 2017–2024 (USD Billion)
Source: MRFR Website
The Global RF GaN Semiconductor Device Market is estimated to grow at a significant rate during the forecast period from 2019 to 2024. The geographic analysis of RF GaN semiconductor device has been conducted for North America (the US, Canada, and Mexico), Europe (the UK, Germany, France, Spain, Italy, and the rest of Europe), Asia-Pacific (China, Japan, India, and the rest of Asia-Pacific), and the rest of the world (the Middle East and Africa and South America).
Growing investments by companies in the development of 5G technology are further expected to add to the market growth. For Instance, according to Ericsson's Mobility Report of June 2019, more than 2.6 billion 5G subscriptions are expected to be registered globally by the end of 2025 which is driving the growth of the market across the globe during the forecast period. North America accounted for the largest market share in 2018 due to the presence of various the largest multinational corporations which are operating in the market such as Raytheon Company, Cree, Inc. and Analog Devices Inc. that offer devices for to end-users including military & defense, IT & telecom, consumer electronics, and others. The increasing investments by companies concerning 5G technology are one of the major factors which are driving the RF GaN semiconductor devices market across the region. North America has been segmented into the US, Canada, and Mexico
MRFR recognizes the Key Players in the Global RF GaN Semiconductor Device Market as Sumitomo Electric Industries, Ltd (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Mitsubishi Electric Corporation (Japan), Infineon Technologies AG (Germany), Renesas Electronics Corporation (Japan), Panasonic Corporation (Japan), Microchip Technology (US), Aethercomm Inc.(US), Cree, Inc. (US), NXP Semiconductor (Netherlands), Analog Devices Inc.(US), ROHM Semiconductors (Japan), Qorvo Inc. (US), among others.
The prominent players keep innovating and investing in research and development to present a cost-effective product portfolio. There have been recent mergers and acquisitions among the key players, a strategy the business entities leverage to strengthen their reach to the customers.
Frequently Asked Questions (FAQ) :
The global RF GaN semiconductor device market is expected to record a substantial market valuation of up to USD 2 million by 2025.
The global RF GaN semiconductor device market is projected to register a striking 20% CAGR in the forecast period.
Wireless infrastructure slated to expand as the fastest-growing segment owing to its quick measurement technique.
North America is the leading region, which is projected to show high growth during the forecast period.
The major market players operating in the global RF GaN semiconductor device market are ROHM Semiconductors (Japan), NXP Semiconductor (Netherlands), Analog Devices Inc.(US), Qorvo Inc. (US), among others.