RF GaN Semiconductor Device Market Research Report: By Material (GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond), Applications (Wireless Infrastructure, Power Storage, Satellite Communication, PV Inverter, and others), End-Users (Aerospace & Defense, IT & Telecom, Consumer Electronics, Automotive, Others) and Region (North America, Europe, Asia-Pacific and Rest of the World) - Forecast till 2027
ID: MRFR/SEM/7192-HCR | February 2021 | Region: Global | 111 Pages
Table of Contents
1. Executive Summary
2. Scope of the Report
2.1. Market Definition
2.2. Scope of the Study
2.2.1. Research Objectives
2.2.2. Assumptions & Limitations
2.3. Markets Structure
3. Market Research Methodology
3.1. Research Process
3.2. Secondary Research
3.3. Primary Research
3.4. Forecast Model
4. Market Landscape
4.1. Porter’s Five Forces Analysis
4.1.1. Threat of New Entrants
4.1.2. Bargaining Power of Buyers
4.1.3. Threat of Substitutes
4.1.4. Intensity of Rivalry
4.1.5. Bargaining Power of Suppliers
4.2. Value Chain/Supply Chain of the Global RF GaN Semiconductor Devices Market
5. Market Overview of the Global RF GaN Semiconductor Devices Market
5.1. Introduction
5.2. Growth Drivers
5.3. Impact Analysis
5.4. Market Challenges
6. Market Trends
6.1. Introduction
6.2. Growth Trends
6.3. Impact analysis
7. Global RF GaN Semiconductor Devices Market, by Material
7.1. Introduction
7.2. GaN-On-SiC
7.2.1. Market Estimates & Forecast, 2020–2027
7.2.2. Market Estimates & Forecast, by Region, 2020–2027
7.3. GaN-On-Silicon
7.3.1. Market Estimates & Forecast, 2020–2027
7.3.2. Market Estimates & Forecast, by Region, 2020–2027
7.4. GaN-On-Diamond
7.4.1. Market Estimates & Forecast, 2020–2027
7.4.2. Market Estimates & Forecast, by Region, 2020–2027
8. Global RF GaN Semiconductor Devices Market, by Applications
8.1. Introduction
8.2. Wireless Infrastructure
8.2.1. Market Estimates & Forecast, 2020–2027
8.2.2. Market Estimates & Forecast, by Region, 2020–2027
8.3. Power Storage
8.3.1. Market Estimates & Forecast, 2020–2027
8.3.2. Market Estimates & Forecast, by Region, 2020–2027
8.4. Satellite Communication
8.4.1. Market Estimates & Forecast, 2020–2027
8.4.2. Market Estimates & Forecast, by Region, 2020–2027
8.5. PV Inverter
8.5.1. Market Estimates & Forecast, 2020–2027
8.5.2. Market Estimates & Forecast, by Region, 2020–2027
8.6. Others
8.6.1. Market Estimates & Forecast, 2020–2027
8.6.2. Market Estimates & Forecast, by Region, 2020–2027
9. Global RF GaN Semiconductor Devices Market, by End-Users
9.1. Introduction
9.2. Aerospace & Defense
9.2.1. Market Estimates & Forecast, 2020–2027
9.2.2. Market Estimates & Forecast, by Region, 2020–2027
9.3. IT & Telecom
9.3.1. Market Estimates & Forecast, 2020–2027
9.3.2. Market Estimates & Forecast, by Region, 2020–2027
9.4. Consumer Electronics
9.4.1. Market Estimates & Forecast, 2020–2027
9.4.2. Market Estimates & Forecast, by Region, 2020–2027
9.5. Automotive
9.5.1. Market Estimates & Forecast, 2020–2027
9.5.2. Market Estimates & Forecast, by Region, 2020–2027
9.6. Others
9.6.1. Market Estimates & Forecast, 2020–2027
9.6.2. Market Estimates & Forecast, by Region, 2020–2027
10. Global RF GaN Semiconductor Devices Market, by Region
10.1. Introduction
10.2. North America
10.2.1. Market Estimates & Forecast, by Country, 2020–2027
10.2.2. Market Estimates & Forecast, by Material, 2020–2027
10.2.3. Market Estimates & Forecast, by Applications, 2020–2027
10.2.4. Market Estimates & Forecast, by End-Users, 2020–2027
10.2.5. US
10.2.5.1. Market Estimates & Forecast, by Material, 2020–2027
10.2.5.2. Market Estimates & Forecast, by Applications, 2020–2027
10.2.5.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.2.6. Canada
10.2.6.1. Market Estimates & Forecast, by Material, 2020–2027
10.2.6.2. Market Estimates & Forecast, by Applications, 2020–2027
10.2.6.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.2.7. Mexico
10.2.7.1. Market Estimates & Forecast, by Material, 2020–2027
10.2.7.2. Market Estimates & Forecast, by Applications, 2020–2027
10.2.7.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.3. Europe
10.3.1. Market Estimates & Forecast, by Country, 2020–2027
10.3.2. Market Estimates & Forecast, by Material, 2020–2027
10.3.3. Market Estimates & Forecast, by Applications, 2020–2027
10.3.4. Market Estimates & Forecast, by End-Users, 2020–2027
10.3.5. UK
10.3.5.1. Market Estimates & Forecast, by Material, 2020–2027
10.3.5.2. Market Estimates & Forecast, by Applications, 2020–2027
10.3.5.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.3.6. Germany
10.3.6.1. Market Estimates & Forecast, by Material, 2020–2027
10.3.6.2. Market Estimates & Forecast, by Applications, 2020–2027
10.3.6.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.3.7. France
10.3.7.1. Market Estimates & Forecast, by Material, 2020–2027
10.3.7.2. Market Estimates & Forecast, by Applications, 2020–2027
10.3.7.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.3.8. Italy
10.3.8.1. Market Estimates & Forecast, by Material, 2020–2027
10.3.8.2. Market Estimates & Forecast, by Applications, 2020–2027
10.3.8.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.3.9. Rest of Europe
10.3.9.1. Market Estimates & Forecast, by Material, 2020–2027
10.3.9.2. Market Estimates & Forecast, by Applications, 2020–2027
10.3.9.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.4. Asia-Pacific
10.4.1. Market Estimates & Forecast, by Country, 2020–2027
10.4.2. Market Estimates & Forecast, by Material, 2020–2027
10.4.3. Market Estimates & Forecast, by Applications, 2020–2027
10.4.4. Market Estimates & Forecast, by End-Users, 2020–2027
10.4.5. China
10.4.5.1. Market Estimates & Forecast, by Material, 2020–2027
10.4.5.2. Market Estimates & Forecast, by Applications, 2020–2027
10.4.5.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.4.6. Japan
10.4.6.1. Market Estimates & Forecast, by Material, 2020–2027
10.4.6.2. Market Estimates & Forecast, by Applications, 2020–2027
10.4.6.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.4.7. India
10.4.7.1. Market Estimates & Forecast, by Material, 2020–2027
10.4.7.2. Market Estimates & Forecast, by Applications, 2020–2027
10.4.7.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.4.8. Rest of Asia-Pacific
10.4.8.1. Market Estimates & Forecast, by Material, 2020–2027
10.4.8.2. Market Estimates & Forecast, by Applications, 2020–2027
10.4.8.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.5. Rest of the World
10.5.1. Market Estimates & Forecast, by, Country, 2020–2027
10.5.2. Market Estimates & Forecast, by Material, 2020–2027
10.5.3. Market Estimates & Forecast, by Applications, 2020–2027
10.5.4. Market Estimates & Forecast, by End-Users, 2020–2027
10.5.5. The Middle East & Africa
10.5.5.1. Market Estimates & Forecast, by Material, 2020–2027
10.5.5.2. Market Estimates & Forecast, by Applications, 2020–2027
10.5.5.3. Market Estimates & Forecast, by End-Users, 2020–2027
10.5.6. South America
10.5.6.1. Market Estimates & Forecast, by Material, 2020–2027
10.5.6.2. Market Estimates & Forecast, by Applications, 2020–2027
10.5.6.3. Market Estimates & Forecast, by End-Users, 2020–2027
11. Company Profiles
11.1. Infineon Technologies AG
11.1.1. Company Overview
11.1.2. Product/Business Segment Overview
11.1.3. Financial Updates
11.1.4. Key Developments
11.1.5. SWOT Analysis
11.1.6. Key Strategies
11.2. Renesas Electronics Corporation
11.2.1. Company Overview
11.2.2. Product/Business Segment Overview
11.2.3. Financial Updates
11.2.4. Key Developments
11.2.5. SWOT Analysis
11.2.6. Key Strategies
11.3. Panasonic Corporation
11.3.1. Company Overview
11.3.2. Product/Business Segment Overview
11.3.3. Financial Updates
11.3.4. Key Developments
11.3.5. SWOT Analysis
11.3.6. Key Strategies
11.4. Mitsubishi Electric Corporation
11.4.1. Company Overview
11.4.2. Product/Business Segment Overview
11.4.3. Financial Updates
11.4.4. Key Developments
11.4.5. SWOT Analysis
11.4.6. Key Strategies
11.5. Toshiba Corporation
11.5.1. Company Overview
11.5.2. Product/Business Segment Overview
11.5.3. Financial Updates
11.5.4. Key Developments
11.5.5. SWOT Analysis
11.5.6. Key Strategies
11.6. Hitachi, Ltd
11.6.1. Company Overview
11.6.2. Product/Business Segment Overview
11.6.3. Financial Updates
11.6.4. Key Developments
11.6.5. SWOT Analysis
11.6.6. Key Strategies
11.7. STMicroelectronics
11.7.1. Company Overview
11.7.2. Product/Business Segment Overview
11.7.3. Financial Updates
11.7.4. Key Developments
11.7.5. SWOT Analysis
11.7.6. Key Strategies
11.8. Robert Bosch GmbH
11.8.1. Company Overview
11.8.2. Product/Business Segment Overview
11.8.3. Financial Updates
11.8.4. Key Developments
11.8.5. SWOT Analysis
11.8.6. Key Strategies
11.9. Sumitomo Electric Industries, Ltd.
11.9.1. Company Overview
11.9.2. Product/Business Segment Overview
11.9.3. Financial Updates
11.9.4. Key Developments
11.9.5. SWOT Analysis
11.9.6. Key Strategies
11.10. Raytheon Company
11.10.1. Company Overview
11.10.2. Product/Business Segment Overview
11.10.3. Financial Updates
11.10.4. Key Developments
11.10.5. SWOT Analysis
11.10.6. Key Strategies
11.11. Microchip Technology
11.11.1. Company Overview
11.11.2. Product/Business Segment Overview
11.11.3. Financial Updates
11.11.4. Key Developments
11.11.5. SWOT Analysis
11.11.6. Key Strategies
11.12. Aethercomm Inc.
11.12.1. Company Overview
11.12.2. Product/Business Segment Overview
11.12.3. Financial Updates
11.12.4. Key Developments
11.12.5. SWOT Analysis
11.12.6. Key Strategies
11.13. Cree, Inc.
11.13.1. Company Overview
11.13.2. Product/Business Segment Overview
11.13.3. Financial Updates
11.13.4. Key Developments
11.13.5. SWOT Analysis
11.13.6. Key Strategies
11.14. NXP Semiconductor
11.14.1. Company Overview
11.14.2. Product/Business Segment Overview
11.14.3. Financial Updates
11.14.4. Key Developments
11.14.5. SWOT Analysis
11.14.6. Key Strategies
11.15. Analog Devices Inc.
11.15.1. Company Overview
11.15.2. Product/Business Segment Overview
11.15.3. Financial Updates
11.15.4. Key Developments
11.15.5. SWOT Analysis
11.15.6. Key Strategies
11.16. ROHM Semiconductors
11.16.1. Company Overview
11.16.2. Product/Business Segment Overview
11.16.3. Financial Updates
11.16.4. Key Developments
11.16.5. SWOT Analysis
11.16.6. Key Strategies
12. Conclusion
LIST OF TABLES
Table1 Global RF GaN Semiconductor Devices Market, by Country, 2020-2027
Table2 North America: RF GaN Semiconductor Devices Market, by Country, 2020–2027
Table3 Europe: RF GaN Semiconductor Devices Market, by Country, 2020–2027
Table4 Asia-Pacific: RF GaN Semiconductor Devices Market, by Country, 2020–2027
Table5 South America: RF GaN Semiconductor Devices Market, by Country, 2020–2027
Table6 North America: RF GaN Semiconductor Devices Market, by Country, 2020–2027
Table7 North America: RF GaN Semiconductor Devices Market, by Material, 2020–2027
Table8 North America: RF GaN Semiconductor Devices Market, by Applications, 2020–2027
Table9 North America: RF GaN Semiconductor Devices Market, by End-Users, 2020–2027
Table10 Europe: RF GaN Semiconductor Devices Market, by Country, 2020–2027
Table11 Europe: RF GaN Semiconductor Devices Market, by Material, 2020–2027
Table12 Europe: RF GaN Semiconductor Devices Market, by Application, 2020–2027
Table13 Europe: RF GaN Semiconductor Devices Market, by End-Users, 2020–2027
Table14 Asia-Pacific: RF GaN Semiconductor Devices Market, by Country, 2020–2027
Table15 Asia-Pacific RF GaN Semiconductor Devices Market, by Material, 2020–2027
Table16 Asia-Pacific: RF GaN Semiconductor Devices Market, by Application, 2020–2027
Table17 Asia-Pacific: RF GaN Semiconductor Devices Market, by End-Users, 2020–2027
Table18 Middle East & Africa: RF GaN Semiconductor Devices Market, by Country, 2020–2027
Table19 Middle East & Africa: RF GaN Semiconductor Devices Market, by Material, 2020–2027
Table20 Middle East & Africa: RF GaN Semiconductor Devices Market, by Application, 2020–2027
Table21 Middle East & Africa: RF GaN Semiconductor Devices Market, by End-Users, 2020–2027
Table22 South America: RF GaN Semiconductor Devices Market, by Country, 2020–2027
Table23 South America: RF GaN Semiconductor Devices Market, by Material, 2020–2027
Table24 South America: RF GaN Semiconductor Devices Market, by Application, 2020–2027
Table25 South America: RF GaN Semiconductor Devices Market, by End-Users, 2020–2027
LIST OF FIGURES
Figure 1 Global RF GaN Semiconductor Devices Market Segmentation
Figure 2 Forecast Methodology
Figure 3 Porter’s Five Forces Analysis of the Global RF GaN Semiconductor Devices Market
Figure 4 Value Chain of the Global RF GaN Semiconductor Devices Market
Figure 5 Share of the Global RF GaN Semiconductor Devices Market in 2020, by country (in %)
Figure 6 Global RF GaN Semiconductor Devices Market, 2020–2027
Figure 7 Share of the Global RF GaN Semiconductor Devices Market by Industry, 2020–2027
Figure 8 Global RF GaN Semiconductor Devices Market Size, by Material, 2020
Figure 9 Share of the Global RF GaN Semiconductor Devices Market, by Material, 2020–2027
Figure 10 Global RF GaN Semiconductor Devices Market Size, by Application, 2020
Figure 11 Share of the Global RF GaN Semiconductor Devices Market, by Application, 2020–2027
Figure 12 Global RF GaN Semiconductor Devices Market Size, by End-Users, 2020
Figure 13 Share of the Global RF GaN Semiconductor Devices Market, by End-Users, 2020–2027
RF GaN Semiconductor Device Market
RF GaN Semiconductor Device Market will exhibit a CAGR of 20.3% in the forecast period of 2019-2025 and is expected to reach 1,607.23 Million by 2025
$1,607.23 Million
Market Size
20.3%
CAGR
North America
Dominating Region
2019–2025
Forecast Period
Segmentation
Key Players
- Sumitomo Electric Industries Ltd (Japan)
- Raytheon Company (US)
- Robert Bosch GmbH (Germany)
- STMicroelectronics (France)
- Hitachi Ltd (Japan)
- Toshiba Corporation (Japan)
- Mitsubishi Electric Corporation (Japan)
- Infineon Technologies AG (Germany)
- Renesas Electronics Corporation (Japan)
- Panasonic Corporation (Japan)
- Microchip Technology (US)
- Aethercomm Inc.(US)
- Cree Inc. (US)
- NXP Semiconductor (Netherlands)
- Analog Devices Inc.(US)
- ROHM Semiconductors (Japan)
- Qorvo Inc. (US)
Drivers
- The increasing demand for RF GaN devices for IT & telecommunication equipment
- The increase need for RF GaN devices in the production of IT & telecommunication equipment.
RF GaN Semiconductor Device Market Overview
Global RF GaN Semiconductor Device Market is estimated to reach USD 1,607.23 Million by 2025, registering a CAGR of 20.3% during the forecast period of 2019–2025. For power electronics applications that require high-power density RF performance, RF GaN is one of the emerging technologies. RF-based power amplifiers are used in the transmitter circuitry of a variety of products and services. Because GaN has a broad bandgap, it has a strong breakdown field, allowing GaN devices to operate at greater voltages than conventional semiconductor devices. Cell phones, radio and television broadcasts, MRI machines, radar, space and satellite communications, and military communications all rely on RF GaN semiconductor devices, thus increasing the RF GaN Semiconductor Device Market Share.
Gallium nitride (GaN) is now being used to improve the performance of numerous devices in radio frequency (RF) and microwave applications. GaN is roughly 10% more efficient than laterally diffused MOSFETs (LDMOS), resulting in significant energy savings at power levels of 600W or above, which is a primary driver of the market. Furthermore, businesses are substantially investing in the creation of novel technologies for a variety of purposes. With the use of RF GaN semiconductor devices, NXP Semiconductors has created many wireless applications such as HF (high frequency), VHF (very high frequency), and UHF (ultra-high frequency) radar (1–1000 MHz), S-band radar, avionics, and L-band radar and it increases the RF GaN Semiconductor Device Market Trends during the RF GaN Semiconductor Device Market Analysis.
COVID 19 Analysis
Cree, Infineon Technologies, Qorvo, MACOM, NXP Semiconductors, Mitsubishi Electric, Efficient Power Conversion (EPC), GaN Systems, Nichia Corporation, and Epistar Corporation are among the leading firms in the GaN semiconductor device market. These companies' manufacturing and fabrication facilities, as well as their corporate offices, are located in Asia Pacific, Europe, and North America. These firms' GaN solutions are acquired by a variety of stakeholders for a variety of applications. COVID-19 had an impact on not just the operations of GaN semiconductor manufacturers, but also the operations of their suppliers and distributors. In the immediate term, the failure of export shipments and poor domestic semiconductor demand in comparison to pre-COVID-19 levels is projected to hurt RF GaN Semiconductor Device Market and slightly stagnant RF GaN Semiconductor Device Market Demand.
Market Dynamics
Drivers
RF GaN Semiconductor Device Market was discovered to be the ideal replacement material for silicon in medium-voltage power applications by the semiconductor industry. GaN significantly outperforms pure silicon in terms of power efficiency at high voltages, high reliability, and flexibility in power rectification, power factor correction, and power amplification. High-power computing/computer hardware modules and electronic systems, uninterrupted power supply (UPS) systems, electromechanical computing systems, and wireless charging are all applications for GaN semiconductor devices, thus increasing the RF GaN Semiconductor Device Market Size and RF GaN Semiconductor Device Market Share. The RF GaN Semiconductor Device Market Demand, high-operation-temperature, and low-on-resistance power semiconductor devices have been sparked by electric and hybrid automobiles, automotive braking control systems, and rail traction. In terms of performance, efficiency, and quality, GaN power devices are the favored choice for the automobile industry.
Restraints
For numerous power applications, such as power rectification, power factor correction, power amplification, and power transmission, SiC offers higher power efficiency and enhanced power handling capabilities. SiC is the ideal silicon replacement material for high-voltage power applications because it has advanced features such as high power efficiency at high voltages, high reliability, and flexibility in power rectification, power factor correction, and power amplification, far outperforming pure silicon. Even though GaN has many of the same advantages as SiC, such as higher power efficiency, it lacks SiC's ability to produce advanced performance in high voltage ranges (>1 kV). SiC stands out as the preferable alternative for high-voltage power semiconductors because it lacks the inherent extreme hardness and toughness of SiC, reducing the RF GaN Semiconductor Device Market Trends.
Technology Analysis
The broad availability of 5G infrastructure will enable smart manufacturing, smart cities, autonomous vehicles, and linked transportation. Roughly 12% of worldwide mobile traffic is predicted to be on 5G cellular connectivity, according to the Cisco Visual Networking Index by the end of the RF GaN Semiconductor Device Market Forecast. 5G wireless base stations must include efficient technologies, perform well, and are cost-effective. GaN solutions are essential for delivering these qualities. GaN-on-SiC delivers considerable increases in 5G base station efficiency and performance when compared to laterally diffused metal-oxide-semiconductor (LDMOS). Improved thermal conductivity, greater robustness and reliability, better efficiency at higher frequencies, and similar performance in a smaller MIMO array are all advantages of GaN-on-SiC.
Segment Overview
The Global RF GaN Semiconductor Device Market is further bifurcated into various segments depending on various factors to help the market to grow as per the predicted CAGR growth during the RF GaN Semiconductor Device Market Analysis. The Global RF GaN Semiconductor Device Market is segmented based on the following:
RF GaN Semiconductor Device Market, By Material
- GaN-On-Sic
- GaN-On-Silicon
- GaN-On-Diamond
RF GaN Semiconductor Device Market, By Application
- Wireless infrastructure
- Power storage
- Satellite communication
- PV inverted
- Others
RF GaN Semiconductor Device Market, By End-User
- Aerospace & defense
- IT & telecom
- Consumer electronics
- Automotive
- Others
RF GaN Semiconductor Device Market, By Region
- North America
- Europe
- Asia-Pacific
- The Rest of the World
Regional Classifiaction
Companies' increasing investments in the development of 5G technology are projected to contribute to market growth. According to a report, more than 2.6 billion 5G subscriptions are estimated to be recorded globally by the end of the forecast period, propelling market growth globally over the forecast period. Due to the presence of several of the largest multinational corporations operating in the market, such as Raytheon Company, Cree, Inc., and Analog Devices Inc., which offer devices to end-users including military & defense, IT & telecom, consumer electronics, and others, North America accounted for the largest market share during the historic forecast period. One of the primary factors boosting the RF GaN semiconductor devices market across the region is firms' increased investments in 5G technologies.
Competitive Landscape
The market is distinguished by the presence of many global providers. The incumbent players are vying for market share in a ferocious manner. Suppliers can stay afloat in a brutally competitive sector by focusing on cost, quality, accuracy, and product reliability, to name a few factors. The major businesses continue to innovate and spend in R&D to offer a cost-effective product selection. There have been recent mergers and acquisitions among the major players, a tactic used by businesses to expand their consumer base. The major key players in the market are as follows:
- Sumitomo Electric Industries, Ltd (Japan)
- Raytheon Company (US)
- Robert Bosch GmbH (Germany)
- STMicroelectronics (France)
- Hitachi, Ltd (Japan)
- Toshiba Corporation (Japan)
- Mitsubishi Electric Corporation (Japan)
- Infineon Technologies AG (Germany)
- Renesas Electronics Corporation (Japan)
- Panasonic Corporation (Japan)
- Microchip Technology (US)
- Aethercomm Inc.(US)
- Cree, Inc. (US)
- NXP Semiconductor (Netherlands)
- Analog devises Inc.(US)
- ROHM Semiconductors (Japan)
- Qorvo Inc. (US)
RF GaN Semiconductor Device Market Recent Developments
- NXP Chips NV offered USD 2 billion in bonds to assist fund the development of energy-efficient semiconductors for goods including power adapters and electric vehicles. This will result in a lower carbon footprint and more energy-efficient manufacturing in semiconductor fabs. NXP claimed to have reduced absolute emissions of greenhouse gases known as perfluorinated compounds (PFCs) by 66%.
- Cree has introduced four new GaN-on-SiC monolithic microwave integrated circuit (MMIC) devices. The company's RF solution portfolio was expanded with the introduction of new products that deliver high power-added efficiency (PAE) in tiny, industry-standard packages. These components are suitable for a wide range of X-band phased array applications, including weather surveillance, marine, and unmanned aerial system radars.
RF GaN Semiconductor Device Market Report Overview
The study provides a thorough examination of the market. It accomplishes this by offering in-depth qualitative insights, historical data, and accurate market size estimates. The figures in the report are based on well-known research assumptions and methodology. To discover prospective investment opportunities, this research gives an analytical representation of the global market, as well as current trends and future estimates. The study contains a thorough examination of global market share as well as data on key drivers, restraints, and opportunities. As a result, the research study serves as a clearinghouse for market data and analysis from multiple angles. The study also examines the maker's competitive environment. The study was prepared after a complete investigation and assessment of every aspect of the market was conducted using data analysis to achieve significant market growth over the predicted period. The top companies in the sector have also been thoroughly addressed.
Report Scope:
| Report Attribute/Metric | Details |
|---|---|
| Market Size | USD 1,607.23 Million |
| CAGR | 20.3% |
| Base Year | 2019 |
| Forecast Period | 2020-2027 |
| Historical Data | 2018 |
| Forecast Units | Value (USD Million) |
| Report Coverage | Revenue Forecast, Competitive Landscape, Growth Factors, and Trends |
| Segments Covered | Material, Applications, End-Users |
| Geographies Covered | North America, Europe, Asia-Pacific, and Rest of the World (RoW) |
| Key Vendors | Sumitomo Electric Industries, Ltd (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Mitsubishi Electric Corporation (Japan), Infineon Technologies AG (Germany), Renesas Electronics Corporation (Japan), Panasonic Corporation (Japan), Microchip Technology (US), Aethercomm Inc.(US), Cree, Inc. (US), NXP Semiconductor (Netherlands), Analog Devices Inc.(US), ROHM Semiconductors (Japan), Qorvo Inc. (US) |
| Key Market Opportunities | Growing investments by companies in the development of 5G technology. |
| Key Market Drivers |
|
Frequently Asked Questions (FAQ) :
The global RF GaN semiconductor device market is expected to record a substantial market valuation of up to USD 2 million by 2025.
The global RF GaN semiconductor device market is projected to register a striking 20% CAGR in the forecast period.
Wireless infrastructure slated to expand as the fastest-growing segment owing to its quick measurement technique.
North America is the leading region, which is projected to show high growth during the forecast period.
The major market players operating in the global RF GaN semiconductor device market are ROHM Semiconductors (Japan), NXP Semiconductor (Netherlands), Analog Devices Inc.(US), Qorvo Inc. (US), among others.
