As per MRFR Analysis, the Global RF GaN Semiconductor Device Market was valued at USD 1.3543 Billion in 2023 and is projected to reach USD 7.1507 Billion by 2032, growing at a CAGR of 19.96% from 2024 to 2032. The market is driven by the increasing demand for RF GaN devices in IT and telecommunication equipment, as well as the development of electric vehicles (EVs) and hybrid electric vehicles (HEVs). The GaN-On-SiC segment leads the material market due to its superior performance, while the wireless infrastructure segment dominates applications, driven by the growth of 5G technology. North America holds the largest market share, followed by Europe and Asia-Pacific, which is expected to exhibit the highest growth rate during the forecast period.
Key trends driving the RF GaN Semiconductor Device Market include advancements in technology and increasing applications across various sectors.
Key players include Sumitomo Electric Industries, Raytheon Company, Robert Bosch GmbH, STMicroelectronics, Hitachi, Toshiba, Mitsubishi Electric, Infineon Technologies, Renesas Electronics, Panasonic, Microchip Technology, Aethercomm, Cree, NXP Semiconductor, Analog Devices, ROHM Semiconductors, and Qorvo.
Source: Secondary Research, Primary Research, MRFR Database and Analyst Review
Massive demand from the RF semiconductor device industry is a major factor driving the GaN semiconductor device market. The radio frequency domain is closely related to communication, which requires electronic devices operating at different communication frequencies depending on the application. Owing to their ability to deliver high power amplification at very high-frequency ranges, GaN semiconductor devices penetrated the RF power semiconductor device market. The development of GaN monolithic microwave integrated circuits (MMICs) has further accelerated the adoption of GaN RF applications.
Developing electric vehicles (EVs) and hybrid electric vehicles (HEVs) also offer lucrative growth opportunities for the GaN semiconductor device market. Both GaN power semiconductor devices and opto-semiconductor devices have vast growth opportunities in the power and optoelectronic systems used in this application segment, aided by the rapid growth of the EV and HEVS market. Electrical systems in EVs and HEVs are expected to increase demand for GaN semiconductor devices, particularly in control systems, motor drives, braking systems, and lighting and instructions. DC-DC converters, electric motors and inverters in various automotive body components such as batteries, machinery and air conditioning systems are current developments in GaN power semiconductor devices for EV and HEVS part information. Thus, driving the RF GaN Semiconductor Device market revenue.
The RF GaN Semiconductor Device Market segmentation, based on Material, includes GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond. The GaN-On-SiC segment dominated the market because GaN-On-SiC devices offer superior performance and efficiency over GaN-On-Silicon devices. GaN-On-SiC devices offer superior performance and efficiency over GaN-On-Silicon devices.GaN-On-SiC devices are used in various applications, such as 5G, Wi-Fi, and automotive radar. The growth of the wireless communication market drives the demand for GaN-On-SiC devices.
Source: Secondary Research, Primary Research, MRFR Database and Analyst Review
Based on application, the RF GaN Semiconductor Device Market segmentation includes Wireless Infrastructure, Power Storage, Satellite Communication, PV Inverters, and Others. The wireless infrastructure segment dominated the market because GaN-based devices are used in a wide variety of wireless infrastructure applications, such as 5G base stations and Wi-Fi routers.GaN-based devices offer superior performance and efficiency over traditional silicon-based devices. The growth of the wireless communication market drives the demand for GaN-based devices. The wireless infrastructure market is a large and growing market.
The RF GaN Semiconductor Device Market segmentation, based on End-Users, includes Aerospace & Defense, IT & Telecom, Consumer Electronics, Automotive, and Others. The aerospace & defense segment dominated the market because GaN-based devices are used in a wide range of aerospace and defense applications, such as radar, satellite communication, and electronic warfare.GaN-based devices offer superior performance and efficiency over traditional silicon-based devices. The growth of the aerospace and defense market drives the demand for GaN-based devices. The aerospace and defense market is a large and growing market.
Segmented by region, the study provides market insights for North America, Europe, Asia Pacific and the rest of the world. The North American RF GaN Semiconductor Device market will dominate this market, owing to advancements in blockchain technology and numerous government initiatives supporting the acceptance of innovative platforms in healthcare to support market growth.
Also, major countries reviewed in the market report include the United States, Canada, Germany, France, United Kingdom, Italy, Spain, China, Japan, India, Australia, Korea, South Korea and Brazil.
Source: Secondary Research, Primary Research, MRFR Database and Analyst Review
Europe RF GaN Semiconductor Device market accounts for the second-largest market share due to the multibillion-euro investment in technology development by putting money into the blockchain, high-performance computing, and data infrastructure. Further, the German RF GaN Semiconductor Device market witnessed the largest market share, and the UK RF GaN Semiconductor Device market was the fastest-growing market in the European Region.
The Asia-Pacific RF GaN Semiconductor Device Market is expected to grow at the largest CAGR from 2024 to 2032. This is due to predominant in several application segments such as consumer and enterprise, telecommunications, automotive, industrial, etc. Moreover, China’s RF GaN Semiconductor Device market held the largest market share, and the Indian RF GaN Semiconductor Device market was the fastest-growing market in the Asia-Pacific region.
Leading manufacturers are investing heavily in research and development to expand their products, which will facilitate further growth of the radio frequency gallium nitride semiconductor product market. Entrepreneurs are also undertaking various activities to expand their global footprint, and key business development activities include new product development, contract deals, joint venture mergers and acquisitions, increased investment and collaboration with other organisations. To grow and survive in a more competitive and competitive business environment, the RF GaN semiconductor device industry needs to provide quality products.
Manufacturing locally to minimize operational costs is one of the major business tactics manufacturers use in the global RF GaN Semiconductor Device industry to benefit clients and increase the market sector.
Major players in the RF GaN Semiconductor Device market, including Sumitomo Electric Industries, Ltd (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Mitsubishi Electric Corporation (Japan), Infineon Technologies AG (Germany), Renesas Electronics Corporation (Japan), Panasonic Corporation (Japan), Microchip Technology (US), Aethercomm Inc. (US), Cree, Inc. (US), NXP Semiconductor (Netherlands), Analog Devices Inc. (US), ROHM Semiconductors (Japan), Qorvo Inc. (US)., and Other companies are trying to meet their business needs by investing in R&D activities.
Infineon Technologies AG is Germany's largest semiconductor manufacturer. Before the split, the semiconductor business was part of the former parent company Siemens AG. With approximately 50,280 employees. Infineon Technologies AG is Germany's largest semiconductor manufacturer. Before the split, the semiconductor business was part of the former parent company Siemens AG. With approximately 50,280 employees, Infineon Technologies launched a new portfolio of integrated power stage (IPS) GaN power devices. The new family of CoolGaN devices included half-bridge and single-channel products meant for low-to-medium power applications, including adapters, chargers, and motor drives.
The Cree are a North American Indigenous people. They live primarily in Canada, where they form one of the country's largest First Nations. Cree Lighting is an LED lighting pioneer with deep roots and expertise. Shop our solutions today, from LED outdoor lights to recessed lighting. Cree launched 4 new multi-stage GaN-on-SiC monolithic microwave integrated circuit (MMIC) devices. The newly launched products extended the company's range of RF solutions and delivered high power-added efficiency (PAE) in small, industry-standard packages. These products are designed for various pulsed and continuous-wave X-band phased array applications, including weather surveillance, marine and unmanned aerial system radars.
Raytheon Company (US)
Robert Bosch GmbH (Germany)
STMicroelectronics (France)
Hitachi, Ltd (Japan)
Toshiba Corporation (Japan)
Mitsubishi Electric Corporation (Japan)
Infineon Technologies AG (Germany)
Renesas Electronics Corporation (Japan)
Panasonic Corporation (Japan)
Microchip Technology (US)
Aethercomm Inc.(US)
Cree, Inc. (US)
NXP Semiconductor (Netherlands)
Analog devises Inc.(US)
ROHM Semiconductors (Japan)
Qorvo Inc. (US)
May 2021: Infineon Technologies launched a new portfolio of integrated power stage (IPS) GaN power devices. The new family of CoolGaN devices included half-bridge and single-channel products meant for low-to-medium power applications, including adapters, chargers, and motor drives.
March 2021: Cree launched 4 new multi-stage GaN-on-SiC monolithic microwave integrated circuit (MMIC) devices. The newly launched products extended the company's range of RF solutions and delivered high power-added efficiency (PAE) in small, industry-standard packages. These products are designed for various pulsed and continuous-wave X-band phased array applications, including weather surveillance, marine and unmanned aerial system radars.
GaN-On-SiC
GaN-On-Silicon
GaN-On-Diamond
Wireless Infrastructure
Power Storage
Satellite Communication
PV Inverter
Others
Aerospace & Defense
IT & Telecom
Consumer Electronics
Automotive
Others
North America
Asia-Pacific
China
Japan
India
Australia
South Korea
Australia
Rest of Asia-Pacific
Rest of the World
Middle East
Africa
Latin America
| Report Attribute/Metric | Details |
| Market Size 2023 | USD 1.3543 billion |
| Market Size 2024 | USD 1.6674 billion |
| Market Size 2032 | USD 7.1507 billion |
| Compound Annual Growth Rate (CAGR) | 19.96% (2024-2032) |
| Base Year | 2023 |
| Market Forecast Period | 2024-2032 |
| Historical Data | 2018- 2022 |
| Market Forecast Units | Value (USD Billion) |
| Report Coverage | Revenue Forecast, Market Competitive Landscape, Growth Factors, and Trends |
| Segments Covered | Material, Application, End-Users, and Region |
| Geographies Covered | North America, Europe, AsiaPacific, and the Rest of the World |
| Countries Covered | USA, Canada, Germany, France, UK, Italy, Spain, China, Japan, India, Australia, South Korea and Brazil |
| Key Companies Profiled | Â Sumitomo Electric Industries, Ltd (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Mitsubishi Electric Corporation (Japan), Infineon Technologies AG (Germany), Renesas Electronics Corporation (Japan), Panasonic Corporation (Japan), Microchip Technology (US), Aethercomm Inc. (US) |
| Key Market Opportunities | Me Nyuam Obesity, Healthier and Balanced Nutrition |
| Key Market Dynamics | Increase in health difficulties and worries, leading to costly operations |
RF GaN Semiconductor Device Market Highlights:
Frequently Asked Questions (FAQ) :
The RF GaN Semiconductor Device Market size was valued at USD 1.3543 Billion in 2023.
The global market is witnessed to grow at a CAGR of 19.96% during the forecast period, 2024-2032.
North America witnessed the largest share of the global market
The major players in the market areSumitomo Electric Industries, Ltd (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Mitsubishi Electric Corporation (Japan), Infineon Technologies AG (Germany), Renesas Electronics Corporation (Japan).
The GaN-On-SiCcategory dominated the market in 2022.
Aerospace & Defense witnessed the largest share in the global market.
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Senior Research Analyst Ankit gupta is an analyst in market research industry in ict and semi industry. with post-graduation in "telecom and marketing management" and graduation in "electronics and telecommunication" vertical he is well versed with recent development in ict industry as a whole. having worked on more than 150+ reports including consultation for fortune 500 companies such as microsoft and rio tinto in identifying solutions with respect to business problems his opinions are inclined towards mixture of technical and managerial aspects.
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