ID: MRFR/SEM/7192-HCR | 111 Pages | Published By Ankit Gupta on March 2023
RF GaN Semiconductor Device Market will exhibit a CAGR of 23.12 in the forecast period of 2022-2030 and is expected to reach 5.35 billion by 2030
Globally, the size of RF GaN Semiconductor Device Market is expected to reach USD 5.35 billion by 2030 at a CAGR of 23.12% driven by, The RF GaN Semiconductor Device Market was discovered to be the ideal replacement material for silicon in medium-voltage power applications by the semiconductor industry. RF-based power amplifiers are used in the transmitter circuitry of a variety of products and services. Because GaN has a broad bandgap, it has a strong breakdown field, allowing GaN devices to operate at greater voltages than conventional semiconductor devices. Cell phones, radio and television broadcasts, MRI machines, radar, space and satellite communications, and military communications all rely on RF GaN semiconductor devices, thus increasing the RF GaN Semiconductor Device Market Share.
Gallium nitride (GaN) is now being used to improve the performance of numerous devices in radio frequency (RF) and microwave applications. GaN is roughly 10% more efficient than laterally diffused MOSFETs (LDMOS), resulting in significant energy savings at power levels of 600W or above, which is a primary driver of the market. Furthermore, businesses are substantially investing in the creation of novel technologies for a variety of purposes. With the use of RF GaN semiconductor devices, NXP Semiconductors has created many wireless applications such as HF (high frequency), VHF (very high frequency), and UHF (ultra-high frequency) radar (1–1000 MHz), S-band radar, avionics, and L-band radar and it increases the RF GaN Semiconductor Device Market Trends during the RF GaN Semiconductor Device Industry Analysis.
COVID 19 Analysis
Cree, Infineon Technologies, Qorvo, MACOM, NXP Semiconductors, Mitsubishi Electric, Efficient Power Conversion (EPC), GaN Systems, Nichia Corporation, and Epistar Corporation are among the leading firms in the GaN semiconductor device market. These companies' manufacturing and fabrication facilities, as well as their corporate offices, are located in Asia Pacific, Europe, and North America. These firms' GaN solutions are acquired by a variety of stakeholders for a variety of applications. COVID-19 had an impact on not just the operations of GaN semiconductor manufacturers, but also the operations of their suppliers and distributors. In the immediate term, the failure of export shipments and poor domestic semiconductor demand in comparison to pre-COVID-19 levels is projected to hurt RF GaN Semiconductor Device Industry and slightly stagnant RF GaN Semiconductor Device Market Demand.
RF GaN Semiconductor Device Industry was discovered to be the ideal replacement material for silicon in medium-voltage power applications by the semiconductor industry. GaN significantly outperforms pure silicon in terms of power efficiency at high voltages, high reliability, and flexibility in power rectification, power factor correction, and power amplification. High-power computing/computer hardware modules and electronic systems, uninterrupted power supply (UPS) systems, electromechanical computing systems, and wireless charging are all applications for GaN semiconductor devices, thus increasing the RF GaN Semiconductor Device Market Size and RF GaN Semiconductor Device Market Share. The RF GaN Semiconductor Device Market Demand, high-operation-temperature, and low-on-resistance power semiconductor devices have been sparked by electric and hybrid automobiles, automotive braking control systems, and rail traction. In terms of performance, efficiency, and quality, GaN power devices are the favored choice for the automobile industry.
For numerous power applications, such as power rectification, power factor correction, power amplification, and power transmission, SiC offers higher power efficiency and enhanced power handling capabilities. SiC is the ideal silicon replacement material for high-voltage power applications because it has advanced features such as high power efficiency at high voltages, high reliability, and flexibility in power rectification, power factor correction, and power amplification, far outperforming pure silicon. Even though GaN has many of the same advantages as SiC, such as higher power efficiency, it lacks SiC's ability to produce advanced performance in high voltage ranges (>1 kV). SiC stands out as the preferable alternative for high-voltage power semiconductors because it lacks the inherent extreme hardness and toughness of SiC, reducing the RF GaN Semiconductor Device Market Trends.
The broad availability of 5G infrastructure will enable smart manufacturing, smart cities, autonomous vehicles, and linked transportation. Roughly 12% of worldwide mobile traffic is predicted to be on 5G cellular connectivity, according to the Cisco Visual Networking Index by the end of the RF GaN Semiconductor Device Market Forecast. 5G wireless base stations must include efficient technologies, perform well, and are cost-effective. GaN solutions are essential for delivering these qualities. GaN-on-SiC delivers considerable increases in 5G base station efficiency and performance when compared to laterally diffused metal-oxide-semiconductor (LDMOS). Improved thermal conductivity, greater robustness and reliability, better efficiency at higher frequencies, and similar performance in a smaller MIMO array are all advantages of GaN-on-SiC.
The Global RF GaN Semiconductor Device Industry is further bifurcated into various segments depending on various factors to help the market to grow as per the predicted CAGR growth during the RF GaN Semiconductor Device Market Analysis. The Global RF GaN Semiconductor Device Market is segmented based on the following:
RF GaN Semiconductor Device Market, By Material
RF GaN Semiconductor Device Market, By Application
RF GaN Semiconductor Device Market, By End-User
RF GaN Semiconductor Device Market, By Region
Companies' increasing investments in the development of 5G technology are projected to contribute to market growth. According to a report, more than 2.6 billion 5G subscriptions are estimated to be recorded globally by the end of the forecast period, propelling market growth globally over the forecast period. Due to the presence of several of the largest multinational corporations operating in the market, such as Raytheon Company, Cree, Inc., and Analog Devices Inc., which offer devices to end-users including military & defense, IT & telecom, consumer electronics, and others, North America accounted for the largest market share during the historic forecast period. One of the primary factors boosting the RF GaN semiconductor devices market across the region is firms' increased investments in 5G technologies.
The market is distinguished by the presence of many global providers. The incumbent players are vying for market share in a ferocious manner. Suppliers can stay afloat in a brutally competitive sector by focusing on cost, quality, accuracy, and product reliability, to name a few factors. The major businesses continue to innovate and spend in R&D to offer a cost-effective product selection. There have been recent mergers and acquisitions among the major players, a tactic used by businesses to expand their consumer base. The major key players in the market are as follows:
The study provides a thorough examination of the market. It accomplishes this by offering in-depth qualitative insights, historical data, and accurate market size estimates. The figures in the report are based on well-known research assumptions and methodology. To discover prospective investment opportunities, this research gives an analytical representation of the global market, as well as current trends and future estimates. The study contains a thorough examination of global market share as well as data on key drivers, restraints, and opportunities. As a result, the research study serves as a clearinghouse for market data and analysis from multiple angles. The study also examines the maker's competitive environment. The study was prepared after a complete investigation and assessment of every aspect of the market was conducted using data analysis to achieve significant market growth over the predicted period. The top companies in the sector have also been thoroughly addressed.
|Market Size||USD 5.35 billion|
|Forecast Units||Value (USD Million)|
|Report Coverage||Revenue Forecast, Competitive Landscape, Growth Factors, and Trends|
|Segments Covered||Material, Applications, End-Users|
|Geographies Covered||North America, Europe, Asia-Pacific, and Rest of the World (RoW)|
|Key Vendors||Sumitomo Electric Industries, Ltd (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Mitsubishi Electric Corporation (Japan), Infineon Technologies AG (Germany), Renesas Electronics Corporation (Japan), Panasonic Corporation (Japan), Microchip Technology (US), Aethercomm Inc.(US), Cree, Inc. (US), NXP Semiconductor (Netherlands), Analog Devices Inc.(US), ROHM Semiconductors (Japan), Qorvo Inc. (US)|
|Key Market Opportunities||Growing investments by companies in the development of 5G technology.|
|Key Market Drivers||
The global RF GaN semiconductor device market is expected to record a substantial market valuation of up to USD 5.35 billion by 2030.
The major market players operating in the global RF GaN semiconductor device market are ROHM Semiconductors (Japan), NXP Semiconductor (Netherlands), Analog Devices Inc.(US), Qorvo Inc. (US), among others.
Wireless infrastructure slated to expand as the fastest-growing segment owing to its quick measurement technique.
North America is the leading region, which is projected to show high growth during the forecast period.
The global RF GaN semiconductor device market is projected to register a striking 23.12% CAGR in the forecast period.