ID: MRFR/SEM/2837-CR | July 2018 | Region: Global | 100 pages
RF power amplifiers continue to be a critical component in radio communications that transmit high-frequency signals. They are a core part of all base stations in cellular and mobile wireless infrastructure. The significant technological application of the product also points out towards the tremendous market opportunity it holds. In 2017, the global market for RF power amplifier surpassed a valuation of USD 11 Bn, and the figure is likely to grow more than twofold by the year 2023, exhibiting an impressive compound annual growth rate. Also, the rapid expansion of cellular networks across the globe has provided an impetus to the demand for RF power amplifiers. Countries such as China, India, Mexico, Brazil and some of the GCC and ASEAN members are likely to present significant market opportunities during the review period owing to the massive investments that are being made to improve the network infrastructure in these countries. Growing importance of power efficiency and IoT boom are some of the other factors expected to support the growth of the RF power amplifier market in the years to come.
This MRFR market perspective delivers a detailed analysis of the current scenario in the global RF power amplifier market along with revenue forecast till 2023. It also undertook the task of identifying all the critical parameters governing the growth of the RF power amplifier market. The scope of the discussion covered market sizing based on different RF power amplifier frequencies - <10 GHz, 10-20 GHz, 20-30 GHz, 30-60 GHz, and 60+ GHz. Furthermore, analysis of raw materials used for manufacturing RF power amplifiers is also available, which include silicon, gallium arsenide, gallium nitride, silicon germanium. The key packaging types mentioned in the research document include surface mount, die, and standalone/ rack mount. Consumer electronics, aerospace & defense, automotive, and medical are among the primary sectors examined for product application opportunities.
Historical market trends, market dynamics, forecast, market value by region as well as by segmentation, country-level analysis for each market segment, key player’s market share analysis and market factor analysis which covers supply chain and Porter's five forces analysis of the market.
NXP Semiconductors, Qualcomm, Inc., Toshiba Corporation, Infineon Technologies, Broadcom Pte. Ltd., Mitsubishi Corporation, Skyworks Solutions, Inc., Murata Manufacturing Co., Ltd., Analog Devices, Inc., and II-VI, Inc.
MRFR employs innovative and fail-safe research methodologies for projecting market growth and analyzing industry trends. We strive to provide an error-free market trend analysis to assist our clients in preparing for industrial diversions likely to arise in the future. The implementation of primary and secondary research, which includes data mining from fact sheets published by industry leaders, interviews with industry opinion holders, surveys, historical analysis, and, whitepaper references available in public domain among others authenticates the credibility of our market assessments. The focus is on identifying the opportunities and threats in markets and submarkets to ensure an accurate projection of statistically backed data that is essential for staying ahead of the curve and sustain the shifts in the market. Top-down and bottom-up approaches employed ensures delivery of high quality and comprehensive market insights. By utilizing a multi-layer verification process, the authenticity of the derived conclusions is reaffirmed.
For the scope of the research, MRFR’s report offers a comprehensive segmental analysis of the global market for RF power amplifier
By Raw Material
By Packaging Type
By Application Type
Frequently Asked Questions (FAQ) :
MRFR findings reveal that the worldwide market of RF power amplifier can generate substantial turnover by 2023.
Mitsubishi Corporation, Murata Manufacturing Co., Ltd., Skyworks Solutions, Inc., and Analog Devices, Inc. are some prominent companies in the RF power amplifier market.
<10 GHz, 20-30 GHz, 10-20 GHz, 60+ GHz, and 30-60 GHz are working frequencies of RF power amplifier.
The rise in demand for cellular network can support the expansion of the RF power amplifier market.
Silicon, silicon germanium, gallium nitride, and gallium arsenide are materials that are used for the fabrication of RF power amplifier.
Stand alone or rack mount, surface mount, and die are packaging types for RF power amplifier.
A hefty investment by key players in the development of cellular network can favor the RF power amplifier market.
The global RF power amplifier market is expected to grow at an above average CAGR of 13.37% during the forecast period of 2018 to 2023. The global market was valued at USD 11.28 billion in 2017 and is expected to reach an approximate value of USD 24.26 billion by the end of 2023. These projections are indicative of consistent positive market growth and are driven by various factors including the increasing adoption of IoT and demand from cellular networks.
With the significant penetration of smartphones and large global population the demand for reliable, and steady cellular networks is increasing. Present day mobile communication systems are designed in a high-frequency range which allows for large bandwidth. However, to expand existing capabilities and to keep up with the rapidly transforming quality of wireless connectivity, the use of RF power amplifiers is key in building effective RF transmitters. Development of the technology has bought about cost-effective solutions such as full integration of the transceiver and the RF power amplifier into a single CMOS chip, thus increasing demand. The demand for high-quality, secure wireless networks is further amplified by the growing IoT market. The increased adoption of the Internet of Things and the growing connectivity between intelligent devices requires the use of RF power amplifiers to ensure efficiency. The rapid growth of the IoT market directly, and positively affects the growth of the RF power amplifier market.
To reduce ill-effects of distortion, designers use methods to ensure linearity. One side effect of backing-up the RF output in a safe zone for the linearity is the increased power consumption and reduced battery life in base stations which inevitably leads to higher operating costs, thus posing a challenge to market growth. However, development of techniques has led to innovation in linearization and power efficiency in RF power amplifiers. Techniques such as feed-forward, envelope elimination & restoration, Cartesian feedback, and pre-distortion are used to provide significant linearity improvements over wide bandwidths. Feed-forward linearization is widely used in cellular base stations and digital transmitters. Implementation of these innovative techniques and the increasing demand for power efficiency is expected to offer multiple opportunities for market growth during the forecast period.
The global RF power amplifier market is segmented on the basis of frequency, raw material, packaging type, application, and region. By frequency, the market is segmented into <10GHz, 10-20 GHz, 20-30 GHz, 30-60 GHz, and 60+GHz. The 30-60 GHz accounts for the largest segment and is expected to grow the fastest, achieving a CAGR of 17.62% during the forecast period. The segment's leading position is driven by 30-60GHz amplifier applications in linear and saturated applications such as network infrastructure, radar, test & measurement, and communication systems.
By raw material, the market is segmented into silicon, gallium arsenide, gallium nitride, silicon germanium, and others. The silicon segment leads the market is expected to achieve the highest CAGR during the forecast period. The segments leading position is due to silicon's wide use as a semiconductor material and its popularity for its properties and low cost.
By packaging type, the market is segmented into surface amounts, die, standalone/rack mount, and others. Surface mount accounts for the most significant segment and is expected to grow at the highest CAGR during the assessment period due to cost reduction benefits the technology offers.
By application, the market is segmented into consumer electronics, aerospace & defense, automotive, medical, and others. Consumer electronics dominate the market with the majority share and is expected to achieve a CAGR of 17.64 % during the forecast period. The rising adoption of personal consumer electronics such as smartphones, tablets, laptops, and wearable devices has stressed increased demand for RF power amplifiers.
The Asia-Pacific, led by China, is the most significant region in the global RF power amplifier market. The concentration of emerging economies who are placing increasing demands for RF power amplifiers to meet growing needs is expected to drive the market during the assessment period. The developing infrastructure, the presence of a large population with increased demands and purchases of consumer electronics and the presence of several market-leading players, are responsible for the region’s leading position. The Asia Pacific is expected to achieve a CAGR of 18.58% during the review period.
Meanwhile, North America is the second largest region in the global market due to the rapid adoption of the latest in technology and the growing need for power efficiency to meet the high use of cellular networks in the region.
The report includes the eminent market-leading players such as NXP Semiconductors, Toshiba Corporation, Murata Manufacturing Co. Ltd., Analog Devices Inc., II-VI Inc., Qualcomm Inc., Mitsubishi Corporation, Skyworks Solutions Inc., Infineon Technologies, and Broadcom Pte. Ltd.
A few players dominate the RF power amplifier market. Qualcomm Inc. is one of the leaders in providing RF power amplifier enabled products. Qualcomm Inc. is one of the prominent players in the RF power amplifier market and holds 11.86% of the market share. Recent merger activities accompanied by the company's IP portfolio has led to a virtual monopoly of Qualcomm in mobile and telecommunications technology. Qualcomm, Inc. has also collaborated with Sony Corporation to provide RF Front End modem-to-antenna solutions with Snapdragon 845 chipset in Sony Xperia XZ2 smartphone.
Qualcomm is closely followed by NXP Semiconductor N.V., a manufacturer of mixed-signal semiconductors, holding 10.81% of the market share. NXP semiconductor follows an organic growth strategy and believes in expanding its product portfolio with respect to the market demand. NXP Semiconductors has extended their partnership with Harman for providing solutions related to connected car systems.
Infineon Technologies AG deals in designing, developing, manufacturing, and marketing of semiconductor products for automotive applications, transmission of electrical energy, energy-efficient power supplies, mobile phone network infrastructures, and network systems. It holds 9.57% share.
Broadcom Ltd. deals with the designing, developing, and supplying of a wide range of digital and analog semiconductor connectivity solutions, holding a market share of 8.92%. As a part of their strategic approach, the company innovates product development which applies to their entire value chain. They also focus on maintaining the quality of products and believe in expanding through strategic partnerships.
Toshiba Corporation is operating in the business manufacturing and selling a wide range of electrical and electronic products. It holds a 7.92% of market share. The company focuses on the domestic market and continues to hold a strong market position.