New Packages and Materials for Power Devices Market: By Package Type and Material (Chip-Scale Packaging, Wire Bonding Packaging, Silicon Carbide (SiC), Gallium Nitrid (GaN), Gallium Arsenide (GaAs) and Others), By End-Use (Automotive, Telecommunications and Computing, Electronics, Industrial and Others) and Region - Global Forecast Till 2030
ID: MRFR/E&P/6025-CR | February 2019 | Region: Global | 111 pages
New Packages and Materials for Power Devices Market Snapshot
New packages and materials for power devices market is expected to witness a compound annual growth rate of ~45% during the review period (2021-2027), USD 5,870.1 Million 2027
Synopsis
This MRFR report offers a thorough assessment of the global new packages and materials for power devices market. It also includes five-year revenue analysis that ends at 2027. It also covers all the important market elements. Various growth drivers, opportunities and threats have discussed in the report. The scope of discussion also covers different types of packages and materials for power devices such as chip-scale packaging, wire bonding packaging, gallium nitrid (GaN), silicon carbide (SiC), gallium arsenide (GaAs) and Others. A revenue analysis based on end use of new packages and material for power devices is also available in the report.
The outlook towards power semiconductors remains positive. Over the years, tremendous development in packages and materials for power semiconductors has taken place. The global new packages and materials for power devices market is expected to witness a compound annual growth rate of 42.57% during the review period (2018-2023). Fueled by increasing application in computers and telecommunication, demand for power semiconductors is likely to remain substantially high throughout the projection period. Wide band gap (WBG) materials such as gallium nitride (GaN) and SiC are increasingly used in packaging materials given the growing need for higher power density.
Report Coverage
Historical market trends, market dynamics, forecast, market value by region as well as by segmentation, country-level analysis for each market segment, key player’s market share analysis and market factor analysis which covers supply chain and Porter’s five forces analysis of the market.
Companies Covered
STMicroelectronics, SEMIKRON, Efficient Power Conversion Corporation, NXP Semiconductor, ROHM SEMICONDUCTOR, Amkor Technology, Littelfuse, Remtec, Inc., ON Semiconductor, MITSUBISHI ELECTRIC CORPORATION, Orient Semiconductor Electronics Ltd., ROHM SEMICONDUCTOR, Infineon Technologies AG and Exagan.
Research Methodology
MRFR employs highly advanced research structure. Primary and secondary research techniques form the foundation of the research structure. Primary research inputs are mainly derived from interviews and interactions with key personnel. A bulk of secondary resources such as white papers, paid database, investor presentations, authenticated directories, etc. are utilized for affirmation of the gathered information. In addition, a multilayered evaluation process is used for confirming the accuracy of the data. Furthermore, top-down and bottom-up approaches are undertaking for ensuring zero discrepancy.
Other Description
- Market Denomination- USD Mn
- Base Year- 2017
- Forecast Period- from 2018 to 2023
For the scope of the research, MRFR’s report offers a comprehensive segmental analysis of the global market for new packages and materials for power devices
By Package Type and Material
- Chip-scale packaging
- Wire bonding packaging
- Silicon carbide (SiC)
- Gallium nitrid (GaN)
- Gallium arsenide (GaAs)
- Others (Hermetic packaging and Cu Clip packaging)
By End-Use
- Automotive
- Telecommunications and computing
- Computing and telecommunication
- Datacenters
- Gaming systems
- Cryptocurrency
- Electronics
- Industrial
- Others
- Aerospace & defense
- EV charging stations
- Energy generation
- Storage
By Region
- North America
- Europe
- Asia Pacific
- Rest of the World (RoW)
Report Scope:
| Report Attribute/Metric | Details |
|---|---|
| Market Size |
|
| CAGR | 45% (2022-2030) |
| Base Year | 2021 |
| Forecast Period | 2022-2030 |
| Historical Data | 2019 & 2020 |
| Forecast Units | Value (USD Million) |
| Report Coverage | Revenue Forecast, Competitive Landscape, Growth Factors, and Trends |
| Segments Covered | Package Type, Material, End-Use |
| Geographies Covered | North America, Europe, Asia-Pacific, and Rest of the World (RoW) |
| Key Vendors | STMicroelectronics, SEMIKRON, Efficient Power Conversion Corporation, NXP Semiconductor, ROHM SEMICONDUCTOR, Amkor Technology, Littelfuse, Remtec, Inc., ON Semiconductor, MITSUBISHI ELECTRIC CORPORATION, Orient Semiconductor Electronics Ltd., ROHM SEMICONDUCTOR, Infineon Technologies AG and Exagan |
| Key Market Opportunities | New product launches and R&D Amongst major key Players |
| Key Market Drivers |
|
Frequently Asked Questions (FAQ) :
Which competitors are likely at the peak in the new packages and materials for power devices market?
Littelfuse, Efficient Power Conversion Corporation, ON Semiconductor, ROHM SEMICONDUCTOR, NXP Semiconductor, and Infineon Technologies AG are the key players in the market.
The Asia Pacific region is expected to stimulate the market.
A CAGR of roughly 45% is estimated to benefit the market extensively.
The growing applications in computers and telecommunication are projected to motivate the market.
The lack of proper production facilities may restrict market growth.
The income worth USD 2,567.2 Mn is predicted to be garnered by the market in the impending period.
The trend relating to next-gen SiC material is expected to motivate the market.
Global New Packages and Materials for Power Devices Market: Competitive Landscape
NXP Semiconductors (Netherlands), Infineon Technologies AG (Germany), Mitsubishi Electric Corporation (Japan), STMicroelectronics (Switzerland), Littelfuse (US), ON Semiconductor (US), and ROHM Semiconductor (Japan) are the major players operating in the global new packages and materials for power devices market. NXP Semiconductors held the largest share among top players with a share of 11.49% in 2017, followed by Infineon Technologies AG with 10.74% and Mitsubishi Electric Corporation with 8.11% repectively. The key strategies adopted by these companies are new product development and merger & acquisition to improve their position in the global new packages and materials for power devices market.
NXP Semiconductors is the designer of electronics products for security, identification, automotive, networking, radio frequency, analog signal, and power management expertise. It operates through three business divisions, namely automotive, industrial, and IoT solutions. It offers new programmable packages and materials, such as GaN and SiC for power devices under automotive and Industrial segment. It provides leading high-performance mixed signal (HPS) and standard product signals (SP) solutions that provide intellectual property, deep application knowledge, process technology, and manufacturing expertise in the domains of cryptography—security, high-speed interface, radio frequency (RF), mixed-signal analog digital (mixed A/D), power management, digital signal processing, and embedded system design.
Littelfuse is one of the key players in new packages and materials for power devices market and manufacturers, designers, and solution providers of circuit protection products, which are used in power control & sensor technologies, automotive, and industrial markets. The company operates through three major business segments, namely, automotive, electronics, and industrial. The company generates most of its revenue from electronics segments as it highlights broadsets of products includes fuses, fuse accessories, polymer electrostatic discharge, positive temperature cofficient resettable fuses, suppressors, varistors, semiconductor and power semiconductor product, such as discrete transient voltage suppressor, diodes arrays, SiC, metal-oxide semiconductor field-effect transistor (MOSFETs), SiC diodes and insulated-gate bipolar transistor (IGBT) technologies.
Exagan, it is the manufacturer of Gallium Nitride (GaN) based transistor and semiconductors devices for power supply, industrial, automotive, IT electronics, connectivity and other markets. Exagan is the result of a spin-off by Soitec, a semiconductor materials manufacturing company and French organization CEA-Leti, which is involved in research and production of micro and nano-technologies. It offers GaN-based products 650-volt and 1,200-volt fast switching power devices for next generation of electrical converters in solar, IT electronics, and automotive sectors. Furthermore, the company focuses on new product development to expand their market share of in the new packages and materials for power devices market. For instance, in novermber 2018, it introduced G-FET power transistors and G-DRIVE intelligent the new high-power conversion solutions for server and automotive application.
STMicroelectronics is one of the key semiconductor solution providers and integrated device manufacturers, globally. It offers products,, tools, and software & services to its end-use customers. These products & services can be used in the spectrum of electronics and semiconductor solutions. It conducts its business through three business segments, namely automotive and discrete group (ADG), analog, MEMS and sensors group (AMS), and microcontrollers and digital ICs group (MDG). STMicroelectronics intends to continue to increase its market share for business lines and related business lines through new product development and collaboration.
The growth of the market vendors is dependent on market conditions, government support, and industry development. Players focus on strengthening their presence worldwide through new product development and merger & acquisition during the forecast period. These strategies are widely adopted by players to enhance their presence in the global new packages and materials for power devices market.