New Packages and Materials for Power Devices Market Research Report – Global Forecast till 2030

New Packages and Materials for Power Devices Market: By Package Type and Material (Chip-Scale Packaging, Wire Bonding Packaging, Silicon Carbide (SiC), Gallium Nitrid (GaN), Gallium Arsenide (GaAs) and Others), By End-Use (Automotive, Telecommunications and Computing, Electronics, Industrial and Others) and Region - Global Forecast Till 2030

ID: MRFR/E&P/6025-CR | February 2019 | Region: Global | 111 Pages         

New Packages and Materials for Power Devices Market

New Packages and Materials for Power Devices Market share is expected to witness a compound annual growth rate of ~45% during the review period (2022-2030), USD 5,870.1 Million 2027.

Segmentation

By Package Type and Material Chip-Scale Packaging Wire Bonding Packaging Silicon Carbide (SiC) Gallium Nitrid (GaN) Gallium Arsenide (GaAs) Others
By End-Use Automotive Telecommunications and Computing Electronics Industrial Others

Key Players

  • STMicroelectronics
  • SEMIKRON
  • Efficient Power Conversion Corporation
  • NXP Semiconductor
  • ROHM SEMICONDUCTOR
  • Amkor Technology
  • Littelfuse
  • Remtec Inc.
  • ON Semiconductor
  • MITSUBISHI ELECTRIC CORPORATION
  • Orient Semiconductor Electronics Ltd.
  • ROHM SEMICONDUCTOR
  • Infineon Technologies AG
  • Exagan

Drivers

  • New product launches and R&D Amongst major key Players
  • Increasing application in computers and telecommunication
  • Demand for power semiconductors
Speak to Analyst Request a Free Sample

New packages and materials for power devices market is expected to witness a compound annual growth rate of 45% during the review period (2021-2027), USD 5,870.1 Million 2027.


New Packages and Materials for Power Devices Market Snapshot


Packages and materials for power semiconductors have progressed tremendously over the years. During the review period, the global novel packages and materials for power devices market is predicted to rise at a high rate. Demand for powered semiconductors market is expected to stay high throughout the forecast period, owing to growing applications in computers and telecommunications. Wide bandgap (WBG) materials like gallium nitride (GaN) and silicon carbide (SiC) market are becoming more common in packaging materials as the demand for increased power density grows.


People are currently utilizing sustainable and renewable energy to help lessen the worldwide fossil energy issue. As a result, there is a growing demand for sustainable energy. As a result of the worldwide interest in automotive powered electronic devices and efforts to popularise hybrid electric vehicles (HEVs) and electric vehicles (EVs), the automotive module has experienced rapid growth. As a result, the market for power module packaging is growing. Furthermore, to improve performance and reduce losses, more powerful electronic applications are using power modules rather than discrete components. As a result, mastering power module assembly is a must for manufacturers, and it is expected to promote packaging design innovation.


Power Electronic Devices Market Companies Covered


STMicroelectronics, SEMIKRON, Efficient Power Conversion Corporation, NXP Semiconductor, ROHM SEMICONDUCTOR, Amkor Technology, Littelfuse, Remtec, Inc., ON Semiconductor, MITSUBISHI ELECTRIC CORPORATION, Orient Semiconductor Electronics Ltd., ROHM SEMICONDUCTOR, Infineon Technologies AG and Exagan.


Industry News



  • Infineon Technologies Ag expanded its CoolSiCTM power module line for UPS and energy storage applications in February 2019. The CoolSiC 2B power modules, according to Infineon, allow engineers to cut total system costs by enhancing power density. When compared to silicon alternatives, the device has an 80 percent lower switching loss, allowing inverter efficiency levels to reach above 99 percent.

  • Fuji Electric Co. Ltd, Infineon Technologies AG, and Mitsubishi Electric Corporation are among the prominent participants in the market. It is a fast-paced market that necessitates constant innovation and material improvements, as well as significant R&D expenditure. Furthermore, to compete in an open market, power module manufacturers must provide excellent reliability while remaining cost-effective.


New Packages and Materials for Power Devices Market Report Coverage


Historical market trends, market dynamics, forecast, market value by region as well as by segmentation, country-level analysis for each market segment, key player’s market share analysis and market factor analysis which covers supply chain and Porter’s five forces analysis of the market.


For the scope of the research, MRFR’s report offers a comprehensive segmental analysis of the global market for new packages and materials for power devices


By Package Type and Material



  • Chip-scale packaging

  • Wire bonding packaging

  • Silicon carbide (SiC)

  • Gallium nitrid (GaN)

  • Gallium arsenide (GaAs)

  • Others (Hermetic packaging and Cu Clip packaging)


By End-Use



  • Automotive

  • Telecommunications and computing

    • Computing and telecommunication

    • Datacenters

    • Gaming systems

    • Cryptocurrency



  • Electronics

  • Industrial

  • Others

    • Aerospace & defense

    • EV charging stations

    • Energy generation

    • Storage




By Region



  • North America

  • Europe

  • Asia Pacific

  • Rest of the World (RoW)


Research Methodology


MRFR employs highly advanced research structure. Primary and secondary research techniques form the foundation of the research structure.  Primary research inputs are mainly derived from interviews and interactions with key personnel. A bulk of secondary resources such as white papers, paid database, investor presentations, authenticated directories, etc. are utilized for affirmation of the gathered information. In addition, a multilayered evaluation process is used for confirming the accuracy of the data. Furthermore, top-down and bottom-up approaches are undertaking for ensuring zero discrepancy.


Other Description



  • Market Denomination- USD Mn

  • Base Year- 2021

  • Forecast Period- from 2022 to 2030



Report Scope:

Report Attribute/Metric Details
  Market Size

  • 2027: USD 5,870.1 Million
  • 2030: Significant Value
  •   CAGR   45% (2022-2030)
      Base Year   2021
      Forecast Period   2022-2030
      Historical Data   2019 & 2020
      Forecast Units   Value (USD Million)
      Report Coverage   Revenue Forecast, Competitive Landscape, Growth Factors, and Trends
      Segments Covered   Package Type, Material, End-Use
      Geographies Covered   North America, Europe, Asia-Pacific, and Rest of the World (RoW)
      Key Vendors   STMicroelectronics, SEMIKRON, Efficient Power Conversion Corporation, NXP Semiconductor, ROHM SEMICONDUCTOR, Amkor Technology, Littelfuse, Remtec, Inc., ON Semiconductor, MITSUBISHI ELECTRIC CORPORATION, Orient Semiconductor Electronics Ltd., ROHM SEMICONDUCTOR, Infineon Technologies AG and Exagan
      Key Market Opportunities   New product launches and R&D Amongst major key Players
      Key Market Drivers

  • increasing application in computers and telecommunication
  • demand for power semiconductors


  • Speak to Analyst Ask for Customization

    Frequently Asked Questions (FAQ) :

    A CAGR of roughly 45% is estimated to benefit the market extensively.

    Littelfuse, Efficient Power Conversion Corporation, ON Semiconductor, ROHM SEMICONDUCTOR, NXP Semiconductor, and Infineon Technologies AG are the key players in the market.

    The growing applications in computers and telecommunication are projected to motivate the market.

    The lack of proper production facilities may restrict market growth.

    The income worth USD 2,567.2 Mn is predicted to be garnered by the market in the impending period.

    The trend relating to next-gen SiC material is expected to motivate the market.

    Global New Packages and Materials for Power Devices Market: Competitive Landscape   


    NXP Semiconductors (Netherlands), Infineon Technologies AG (Germany), Mitsubishi Electric Corporation (Japan), STMicroelectronics (Switzerland), Littelfuse (US), ON Semiconductor (US), and ROHM Semiconductor (Japan) are the major players operating in the global new packages and materials for power devices market. NXP Semiconductors held the largest share among top players with a share of 11.49% in 2017, followed by Infineon Technologies AG with 10.74% and Mitsubishi Electric Corporation with 8.11% repectively. The key strategies adopted by these companies are new product development and merger & acquisition to improve their position in the global new packages and materials for power devices market.        


    NXP Semiconductors is the designer of electronics products for security, identification, automotive, networking, radio frequency, analog signal, and power management expertise. It operates through three business divisions, namely automotive, industrial, and IoT solutions. It offers new programmable packages and materials, such as GaN and SiC for power devices under automotive and Industrial segment. It provides leading high-performance mixed signal (HPS) and standard product signals (SP) solutions that provide intellectual property, deep application knowledge, process technology, and manufacturing expertise in the domains of cryptography—security, high-speed interface, radio frequency (RF), mixed-signal analog digital (mixed A/D), power management, digital signal processing, and embedded system design. 


    Littelfuse is one of the key players in new packages and materials for power devices market and manufacturers, designers, and solution providers of  circuit protection products, which are used in power control & sensor technologies, automotive, and industrial markets. The company operates through three major business segments, namely, automotive, electronics, and industrial. The company generates most of its revenue from electronics segments as it highlights broadsets of products includes fuses, fuse accessories, polymer electrostatic discharge, positive temperature cofficient resettable fuses, suppressors, varistors, semiconductor and power semiconductor product, such as discrete transient voltage suppressor, diodes arrays, SiC, metal-oxide semiconductor field-effect transistor (MOSFETs), SiC diodes and insulated-gate bipolar transistor (IGBT) technologies.


    Exagan, it is the manufacturer of Gallium Nitride (GaN) based transistor and semiconductors devices for power supply, industrial, automotive, IT electronics, connectivity and other markets. Exagan is the result of a spin-off by Soitec, a semiconductor materials manufacturing company and French organization CEA-Leti, which is involved in research and production of micro and nano-technologies. It offers GaN-based products 650-volt and 1,200-volt fast switching power devices for next generation of electrical converters in solar, IT electronics, and automotive sectors. Furthermore, the company focuses on new product development to expand their market share of in the new packages and materials for power devices market. For instance, in novermber 2018, it introduced G-FET power transistors and G-DRIVE intelligent the new high-power conversion solutions for server and automotive application.


    STMicroelectronics is one of the key semiconductor solution providers and integrated device manufacturers, globally. It offers products,, tools, and software & services  to its end-use customers. These products & services  can be used in the spectrum of electronics and semiconductor solutions. It conducts its business through three business segments, namely automotive and discrete group (ADG), analog, MEMS and sensors group (AMS), and microcontrollers and digital ICs group (MDG). STMicroelectronics intends to continue to increase its market share for business lines and related business lines through new product development and collaboration. 


    The growth of the market vendors is dependent on market conditions, government support, and industry development. Players focus on strengthening their presence worldwide through new product development and merger & acquisition during the forecast period. These strategies are widely adopted by players to enhance their presence in the global new packages and materials for power devices market.