Pune, India, April, 2019, /MRFR Press Release/— Market Research Future published a cooked research report on the global RF GaN market.
The global RF GaN market spans across North America, Europe, Asia-Pacific, and the rest of the world.
The increased demand for IT & telecommunication equipment and adoption of energy & power applications are expected to drive the market during forecast period. Developments in RF power amplifiers are expected to create an opportunity for RF GaN market. However, competition from silicon carbide (SiC) devices is expected to restrain the market during forecast period.
The geographic analysis of the RF GaN market has been conducted for North America, Europe, Asia-Pacific (APAC), and the rest of the world (RoW). North America is expected to dominate the RF GaN market during the forecast period due to the high presence of global players such as Analog Devices Inc., Cree Inc., Aethercomm Inc., Microchip Corporation, Raytheon Company, and Qorvo Inc. North America is responsible for the highest contribution to the demand for RF GaN globally due to high demand from defense sector. The end users present in North America are well aware of the latest technology and trends in the market. As a result, companies in the region are constantly launching new products to increase the level of quality and reflect design innovation.
Europe was the second largest market in 2017, valued at USD 113.36 million; the market is projected to exhibit a CAGR of 20.99%. The region is expected to witness significant support and initiatives from various governments to promote the manufacturing of RF GaN. Europe holds a significant market share in the RF GaN market; the UK holds a strong position in the key market segments. The RF GaN market in Europe is increasing due to presence of global players such as STMicroelectronics NV, NXP Semiconductors NV, United Monolithic semiconductors, and INEX Microtechnology Ltd.
Asia-Pacific is expected to grow at the highest CAGR of 22.82% during forecast period. As per the MRFR analysis, approximately 30% of the consumer disposable income is that of Asia; it is expected to double by 2030. China, Japan, and India are the key contributors in the region. The launch of 5G networks across different countries in the region is expected to drive the demand for RF GaN devices. China accounted for the largest market share of 35.9% in 2017, with a market value of USD 26.8 million; the market is expected to register the highest CAGR of 24.8% during the forecast period. Japan was the second-largest market in 2017, valued at USD 24.2 million; the market is projected to exhibit a CAGR of 22.6%.
Taste the market data and market information presented through more than 30 market data tables and figures spread over 100 numbers of pages of the project report. Avail the in-depth table of content TOC & market synopsis on “The Global RF GaN Market Research Report –Forecast till 2023”.
Access Report Details @ https://www.marketresearchfuture.com/reports/rf-gan-market-6479
Global RF GaN Market: Segmentation
The global RF GaN market has been segmented based on the material type, application, and region. On the basis of material type, the RF GaN market has been segmented into GaN-on-SiC, GaN-on-Silicon, and GaN-on-Diamond. By application, the RF GaN market has been segmented into IT and telecommunication, aerospace, and military and defense.
The key players of global RF GaN market are NXP Semiconductors N.V. (Netherlands), Analog Devices Inc. (US), STMicroelectronics N.V. (Switzerland), Toshiba Corporation (Japan), ROHM Semiconductors (Japan), Cree Inc (US), Aethercomm Inc. (US), Microchip Corporation (US), Raytheon Company (US), and Qorvo Inc. (US) among others.