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GaN Semiconductor Devices Market Share

ID: MRFR//0668-CR | 188 Pages | Author: Ankit Gupta| October 2023

The Gallium Nitride (GaN) semiconductor devices market has witnessed significant growth in recent years, driven by the increasing demand for high-performance electronic components in various applications. In this competitive landscape, companies employ various market share positioning strategies to carve out their niche and stay ahead of the curve.

One prevalent strategy is differentiation, where companies focus on offering unique and innovative GaN semiconductor devices with distinct features and capabilities. By investing in research and development, companies can develop products that stand out in terms of performance, efficiency, and reliability. Differentiated products not only attract customers seeking cutting-edge solutions but also help companies establish a premium brand image, allowing them to command higher prices and capture a specific market segment.

Price leadership is another crucial market share positioning strategy. Some companies choose to become cost leaders by optimizing their manufacturing processes, achieving economies of scale, and efficiently managing the supply chain. By offering GaN semiconductor devices at competitive prices, these companies can appeal to a broader customer base, especially in price-sensitive markets. However, maintaining cost leadership requires constant efforts to improve operational efficiency and reduce production costs without compromising on quality.

Market segmentation is a strategy that involves targeting specific customer segments with tailored GaN semiconductor solutions. Companies analyze the diverse needs of different industries and applications, developing specialized products to address those requirements. This approach allows businesses to create a more personalized value proposition, ensuring that their GaN devices align closely with the unique demands of targeted markets. Successful segmentation enables companies to build strong relationships with customers, fostering loyalty and repeat business.

Collaboration and partnerships play a pivotal role in market share positioning within the GaN semiconductor devices market. Companies often form alliances with other industry players, research institutions, or technology providers to leverage complementary strengths. Collaborative efforts can lead to the development of integrated solutions, expanded product portfolios, and shared resources, enabling companies to collectively capture a larger market share. Strategic partnerships also provide opportunities for joint marketing efforts, which can enhance visibility and credibility in the industry.

Geographical expansion is a strategy that involves targeting new regions and markets to increase market share. As the demand for GaN semiconductor devices grows globally, companies seek opportunities to enter untapped markets. This expansion may involve establishing new distribution channels, setting up local offices, or forming alliances with regional partners. A successful geographical expansion strategy allows companies to access a broader customer base and diversify their revenue streams, reducing dependence on specific markets.

Continuous innovation is a fundamental market share positioning strategy in the dynamic GaN semiconductor devices market. Companies that invest in ongoing research and development can stay ahead of emerging trends and technologies. This proactive approach ensures that they are well-positioned to introduce new and improved products, keeping pace with evolving customer needs. Innovation not only helps companies maintain a competitive edge but also positions them as leaders in shaping the future of GaN semiconductor technology.

Global GaN Semiconductor Devices Market Overview

GaN Semiconductor Devices Market Size was valued at USD 10998.5 Million in 2023. The GaN Semiconductor Devices industry is projected to grow from USD 13253.19 Million in 2024 to USD 60234.2 Million by 2032, exhibiting a compound annual growth rate (CAGR) of 20.83% during the forecast period (2024 - 2032). Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor that is well-suited for high-power transistors capable of operating at high temperatures. It is a very hard, mechanically stable wide bandgap semiconductor that significantly outperforms silicon-based devices in terms of breakdown strength, switching speed, thermal conductivity, and on-resistance. GaN is beginning to see adoption due to its superior properties over silicon devices, such as excellent high-frequency characteristics. As global need for energy increases, a move to GaN technology will help to meet demand while keeping carbon emissions to a minimum. GaN design and integration has been shown to deliver next-generation power semiconductors with a carbon footprint ten times lower than older, slower silicon chips.

GaN Semiconductor Devices Market Overview

Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review

GaN Semiconductor Devices Market Opportunity

  • Applications In Electric and Hybrid Electric Vehicles

The market for GaN semiconductor devices is anticipated to develop in the future due to the increasing use of electric and hybrid electric vehicles. A vehicle with an electric motor powered by a battery that can be charged externally is called an electric car. Electric vehicles use high-efficiency power transistors and integrated circuits made of gallium nitride semiconductors. GaN semiconductors devices offer several benefits over silicon, including 3x the band gap and 10x the breakdown electric field strength in electric vehicle applications. For instance, the Energy Information Administration (EIA), a US-based government agency charged with gathering, analyzing, and disseminating energy information, reported in October 2021 that there were 1.31 billion light-duty vehicles (LDVs) in use worldwide in 2020 and that it is anticipated that there will be 2.21 billion LDVs by 2050. Similarly, it is anticipated that the number of electric cars (EVs), or any LDV with a charging port, will increase from 0.7% of the worldwide LDV fleet in 2020 to 31% in 2050, or 672 million vehicles. As a result, the market for GaN semiconductor devices is driven by the growing use of electric and hybrid vehicles.

GaN Semiconductor Devices Market Component Segment Insights:

GaN Semiconductor Devices - Device Insights

Based on Device, the GaN Semiconductor Devices Market segmentation includes Transistor, Diode, Rectifier, Power IC, Supply and Inverter, Amplifiers, Lighting and Laser, Switching Systems, and Others. The Transistor segment held the majority share in 2022, contributing around ~28.0 % to the market revenue. The transistors market segment had a highest market share. Gallium nitride-based power transistors have become more popular due to the rising demand for power transistors for telecommunications base stations, notably in the burgeoning 4G technology-enabled market. The substantial market share of the transistor segment has been influenced by the move away from conventional silicon-based transistors, which are more efficient and can handle high power and frequency demands.

GaN Semiconductor Devices Vertical Insights

Based on Vertical, the GaN Semiconductor Devices Market segmentation includes Automotive, Industrial, Defense & Aerospace, Consumer Electronics, Telecommunication, Medical and Others. The Consumer Electronics segment held the majority share in 2022 contributing around ~25.9% to the market revenue. GaN semiconductor devices are slowly but steadily making their way into various consumer product categories, such as laptops, displays, mobile devices, etc., accelerating the revenue growth rate. Due to the popularity of high-brightness lighting and effective power conversion and switching in consumer segments, many sectors of this industry are anticipated to generate enormous demand for both GaN opto-semiconductor and power semiconductor devices.

GaN Semiconductor Devices

Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review

GaN Semiconductor Devices Wafer Size Insights

Based on Wafer Size, the GaN Semiconductor Devices Market segmentation includes 2-inch, 4 inch, 6 inch, and More than 6 inches. By wafer size, 4 inch segment holds the majority market share in 2022 contributing 33.4 % of the market share. The 4-inch wafer category held the biggest market share during the forecast period. This expansion results from a rising need for optoelectronics equipment, telecom frontends, high-power amplifiers, and high-temperature equipment. A 4-inch substrate's versatility for space communication applications is also expected to spur expansion.

GaN Semiconductor Devices Type Insights

Based on Type, the GaN Semiconductor Devices Market segmentation includes Power semiconductors, RF semiconductors, and Opto semiconductors. By Type, Opto semiconductors segment holds the majority market share in 2022 contributing 35.7% of the market share. The segment of opto-semiconductors accounted for the large market share. This market is primarily driven by the growing demand for more efficiency in consumer electronics, including LEDs, computers, handheld electronic devices, and industrial applications. Additionally, it is becoming more well-known in sectors like healthcare and the auto industry. The rising demand for LED display panels and head-up displays is a significant driver of this market's expansion.

Figure 2: GaN Semiconductor Devices Market, by Type, 2022 & 2032 (USD Million)

GaN Semiconductor Devices Market, by Type, 2022 & 2032

Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review

GaN Semiconductor Devices Regional Insights

By Region, the study provides market insights into North America, Europe, Asia-Pacific, Middle East & Africa, and South America. In terms of revenue, Asia-Pacific held the largest share of 46.9% in the GaN Semiconductor Devices Market in 2022 and is expected to maintain its dominance during the forecast period. The presence of key players and a focus on infrastructure development in the region contribute to market growth. The Asia Pacific market for GaN semiconductor devices is anticipated to grow significantly over the forecast period. Due to growing technological improvement and the resulting demand for effective and high-performance RF components, the Asia-Pacific regional industry is anticipated to grow at the quickest rate of any regional market over the projected period. Nations like China and Japan are among the region's top consumer electronics makers, including LED display devices, cell phones, and game consoles. This significantly fuels the expansion of the local market. Moreover,

In June 2022- Tata Steel Limited (‘Tata Steel’) announced that Tata Steel Long Products Limited (‘TSLP’), a subsidiary of Tata Steel, has completed the acquisition of 93.71% in 1 million tons per annum Neelachal Ispat Nigam Limited (‘NINL’) from MMTC Ltd., NMDC Ltd., MECON Ltd., Bharat Heavy Electricals Ltd., Industrial Promotion and Investment Corporation of Odisha Ltd., Odisha Mining Corporation Ltd., President of India, Government of Odisha.



Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review

Further, the major countries studied in the market report are the U.S., Canada, Germany, France, the UK, Italy, Spain, China, Japan, India, Australia, South Korea, and Brazil.

The North America is the second largest market in the region. North America is anticipated to dominate the GaN semiconductor devices market over the forecast period because of the large expenditures made in gallium nitride semiconductor technologies and the region's widespread use of sophisticated electronics across several business verticals. GaN-based power semiconductor device development initiatives by the government are anticipated to increase interest in MBE systems in North America.

Europe is expected to witness the fastest growth in the GaN Semiconductor Devices market during the forecast period due to increase in demand for semiconductor devices from the military, emergency medical services, and offshore oil and gas development. Additionally, the aerospace industries and several well-known companies are fueling the GaN semiconductor devices market expansion there. The expanding consumer electronics market is also impacting the region's GaN semiconductor device industry.

The GaN semiconductor devices market in Rest of the World is anticipated to grow substantially over the forecast period due to the significant investments made in gallium nitride semiconductor technologies and the extensive use of contemporary electronics in the region's different sectors.

GaN Semiconductor Devices Key Market Players & Competitive Insights

With a strong presence across different Types and geographies, the GaN Semiconductor Devices Market is highly competitive and dominated by established, pure-play vendors. These vendors have a robust geographic footprint and partner ecosystem to cater to diverse customer segments. The GaN Semiconductor Devices Market is highly competitive, with many vendors offering similar products and services.

The major players in the market include Fujitsu Ltd., Panasonic Coporation, Texas Instruments, Osram Opto-Semiconductors, Cree Incorporate, Toshiba, AixtronSE, Infineon Technologies, ROHM Company Limited, NXP Semiconductors, KoninklijkePhilips N.V., and Others. Philips is a leading innovator in the semiconductor industry, constantly developing new GaN-based technologies. For example, in 2022, Philips announced the development of a new GaN power transistor that is said to be the world's most efficient. Philips offers various GaN-based products, including power transistors, RF amplifiers, and LEDs. This allows Philips to meet the needs of a wide range of customers, from consumer electronics manufacturers to industrial power users. Qorvo is a leading supplier of GaN semiconductor devices known for its high-performance products. For example, Qorvo's GaN power transistors are some of the most efficient in the world. Qorvo offers various GaN-based products, including power transistors, RF amplifiers, and front-end modules. This allows Qorvo to meet the needs of a wide range of customers, from consumer electronics manufacturers to industrial power users.

The GaN Semiconductor Devices Market is a consolidated market due to increasing competition, acquisitions, mergers, and other strategic market developments and decisions to improve operational effectiveness.

Key Companies in the GaN Semiconductor Devices Market include

  • Fujitsu Ltd.

  • Panasonic Coporation

  • Texas Instruments

  • Osram Opto-Semiconductors

  • Cree Incorporate

  • Toshiba

  • AixtronSE

  • Infineon Technologies

  • ROHM Company Limited

  • NXP Semiconductors

  • KoninklijkePhilips N.V.

  • Qorvo

  • Efficient Power Conversion Corporation

  • Taiwan Semiconductor Manufacturing Company

  • Intel Corporation


  • Semiconductor Manufacturing International Corp.

GaN Semiconductor Devices Industry Developments

April 2024: Weltrend Semiconductor and Transphorm, the GaN company, published two new GaN System-in-Packages (SiPs) specially created for high-performance, low-profile USB-C power adapters that could be used with such devices as smartphones, tablets, laptops, headphones, drones, speakers or cameras. These novel devices represent the first SiP product family based on Transphorm’s SuperGaN platform when joined together with Weltrend’s flagship GaN SiP revealed last year.

September 2023: Gallium Semiconductor launched a 2.4-2.5GHz 300W pre-matched discrete GaN-on-SiC High Electron Mobility Transistor (HEMT), – GTH2e-2425300P ISM CW amplifier designed for wide range industrial scientific and medical applications; including but not limited to semiconductor plasma sources as well as microwave plasma chemical vapor deposition (MPCVD) equipment for synthetic diamond production. Until now, there has been no such thing as efficiency at this level in RF Power capability! It operates within the frequency range from 2.4GHz to 2.5GHz while being powered by a supply rail of 50V, thus delivering a rating of efficiency that changes all known benchmarks about RF power capability. This HEMT embodies everything they stand for – dedication towards bettering radio frequency performance with their products like this one having peak efficiencies reaching up over seventy-five percent pulsed mode operation times ten microseconds duty cycles hundred percent.

ROHM Co Ltd., a Japan-based power semiconductor maker, announced in August’23 its development of BM3G0xxMUV-LB series EcoGaN power-stage ICs featuring built-in gate driver optimized for primary power supplies inside industrial and consumer applications, which include data servers among others. The consumer and industrial sectors are increasingly demanding greater energy savings in line with sustainability goals around the world; however, miniaturization while improving efficiency should not compromise reliability. Therefore, handling the gate of GaN HEMTs compared to silicon MOSFETs requires special attention, which calls for a dedicated gate driver.

April-2022: During the National Oil and Gas forum held in Moscow TMK announced that it is focused on launching new steel grades for pipes used to inject carbon dioxide underground for Corrosion Protection and Operational Reliability at TMK’s R&D facility.

April-2022: TMK announced the acquisition of Chelpipe. This acquisition includes production, distribution and servicing assets, scrap collection and processing units, and other assets involved in the operations of Chelpipe’s trunk pipeline systems.

GaN Semiconductor Devices Market Segmentation

GaN Semiconductor Devices Device Outlook

  • Transistor

  • Diode

  • Rectifier

  • Power IC

  • Supply and Inverter

  • Amplifiers

  • Lighting and Laser

  • Switching Systems

  • Others

GaN Semiconductor Devices Vertical Outlook

  • Automotive

  • Industrial

  • Defense & Aerospace

  • Consumer Electronics

  • Telecommunication

  • Medical

  • Others

GaN Semiconductor Devices Wafer Size Outlook

  • 2 inch

  • 4 inch

  • 6 inch

  • More than 6 inches

GaN Semiconductor Devices Type Outlook

  • Power semiconductors

  • RF semiconductors

  • Opto semiconductors

GaN Semiconductor Devices Regional Outlook

  • North America

    • US

    • Canada

  • Europe

    • UK

    • Germany

    • France

    • Italy

    • Spain

    • Rest of Europe

  • Asia-Pacific

    • China

    • Japan

    • India

    • Australia

    • South Korea

    • Rest of Asia Pacific

  • ROW

    • Latin America

    • Middle East & Africa

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