Infineon's OptiMOS Source-Down power MOSFET family now offers PQFN dual-sided cooling for 25-150V
In December 2022, Infineon Technologies AG launched a new Source-Down 3.3 x 3.3 mm2 PQFN product family for the 25-150 V range, with Bottom-Side and Dual-Side Cooling options. As a result of the new product family, the server, telecom, OR-ing, battery protection, power tools, and charger markets will see new opportunities for innovation in DC-DC power conversion. Infineon's new portfolio combines the latest MOSFET technology with leading-edge packaging to bring system performance to the next level. When MOSFET die sources are flipped toward the footprint side of the package, they can be soldered to the PCB. This concept also incorporates an improved drain contact clip on top of the chip and a market-leading chip-to-package area ratio.
With system form factors continually shrinking, power losses must be reduced, and thermal management must be optimized. The new family significantly improves the on-resistance (R DS(on)) by up to 35 percent when compared to best-in-class PQFN 3.3 x 3.3 m2 Drain-Down devices. Dual-Side Cooling on Infineon's OptiMOS Source-Down PQFN eliminates power losses at the switch by redirecting them to the heatsink. A Dual-Side Cooling variant provides a direct connection between a power switch and a heatsink, resulting in a three-fold increase in power dissipation capability over a Bottom-Side Cooled Source-Down variant.
There are two variants of the footprint available to provide the best routing flexibility for PCBs. With a traditional Standard-Gate variant, existing Drain-Down designs can be modified rapidly and easily. Furthermore, the Center-Gate (CG) variant provides new possibilities for paralleling devices to keep the connection between the driver and gate as short as possible. In addition to offering the continuous current capability of up to 298 A, the entire OptiMOS Source-Down PQFN 3.3 x 3.3 mm2 25-150 V product family is designed to deliver exceptional system performance.
