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ReRAM Market Research Report Information By Type (Oxide-Based ReRAM, Conductive Bridging RAM), by End User (IT & Telecom, Consumer Electronics, Aerospace & Defence, Healthcare, Others), and by Region (North America, Europe, Asia-Pacific, Middle East, and Africa, Central and South America) - Industry Forecast till 2027


ID: MRFR/SEM/6928-HCR | 100 Pages | Author: Aarti Dhapte| July 2024

ReRAM Market Size and Overview 


The Global ReRAM Market is expected to grow from USD 310.6 million in 2018 to USD 655 Million by 2027, at a CAGR of 16% during the forecast period. Since the past few years, emerging non-volatile memory technologies such as resistive random-access memory (ReRAM) have been getting significant attention owing to their lower read latency and faster write performance. With the advent of artificial intelligence, high-performance computing (HPC), and IoT devices, a significant amount of data generated is dense and complex. In order to process this data efficiently, innovative memory technologies are needed. Semiconductor companies are adopting ReRAM to deal with the requirements of artificial intelligence and HPC as it can significantly reduce the energy consumption of modern systems while enhancing their performance. Thus, the need for high bandwidth, low power consumption, and highly scalable memory device for technologies such as AI, IoT, and big data is boosting the growth of the ReRAM market.

Also, as ReRAM draws much less power than NAND flash, it is best suited for memory in sensor devices for industrial, and automotive applications. ReRAM is often cited as the logical replacement in applications such as solid-state drives (SSDs) and nonvolatile dual in-line memory modules (NVDIMMs) owing to its higher memory density, faster read and write speeds, and lower power requirement. Furthermore, the growing demand for emerging nonvolatile memory in connected devices is expected to fuel the growth of this market during the forecast period. However, as these memories rely on complicated switching mechanisms and exotic materials, it takes longer to develop. Also, the availability of alternatives like DRAM and flash is making it difficult for ReRAM to get a foothold in the market.


ReRAM is a type of non-volatile memory that comprises a memristor— whose resistance varies depending on the applied voltage. ReRAM has great potential for high storage density, lower power usage, greater read and write speeds, and affordable cost than flash memory because of the thinness of memristors. The two main types of ReRAMs available in the market are oxide-based ReRAM and conductive bridging RAM. At the moment, owing to its tremendous potential, ReRAM is on the verge of becoming a part of the digital mainstream.


In September 2019, Hewlett-Packard Company collaborated with Hynix Semiconductor Inc. to develop new materials and process integration technology to transfer the memristor technology from research to commercial development in the form of resistive random-access memory (ReRAM)In January 2019, the Indian Institute of Technology Delhi (IITD) partnered with Israel-based Weebit Nano to work on a research project that will apply Weebit’s SiOx ReRAM technology to computer chips used for AI


ReRAM Market Segmentation


The global ReRAM market has been segmented based on type, end-user, and region.


On the basis of type, the market has been segmented into oxide-based ReRAM and conductive bridging RAM.


Based on end-user, the market has been segmented into IT & telecom, consumer electronics, aerospace & defense, healthcare, and others.


The global ReRAM market, by region, has been classified into North America, Europe, Asia-Pacific, the Middle East & Africa, and Central and South America.


Regional Insights


The global ReRAM market is projected to grow at a significant rate during the forecast period from 2020 to 2027. The geographic analysis of the ReRAM market has been conducted for North America, Europe, Asia-Pacific, the Middle East & Africa, and Central and South America.


Asia-Pacific is expected to hold the largest market share in the ReRAM market from 2020 to 2027. Within the region, China (including Taiwan) is the leading producer of electronic products and one of the key investment destinations for market players. Furthermore, it accounts for a significant share of ReRAM production. North America holds a significant share of the ReRAM market owing to the high concentration of market players, easy availability of proficient technical expertise, and growing adoption of ReRAM across major application areas.


ReRAM Market Key Player & Competitive Analysis


The prominent players in the ReRAM market are pursuing the launch of high-density ReRAM products as the key growth strategy to further increase their market shares. For instance, in 2019, Fujitsu Semiconductor Ltd in collaboration with Panasonic Semiconductor Solutions Co., Ltd launched an 8Mb ReRAM non-volatile memory that is effective for situation data read more than data were written out.


Key Companies & Market Share Insights

The key players in the ReRAM market are Crossbar Inc. (US), Fujitsu Limited (Japan), Intel Corporation (US), Panasonic Corporation (Japan), Semiconductor Manufacturing International Corporation (China), SK Hynix Inc. (South Korea), Adesto Technologies Corporation (US), Micron Technology, Inc. (US), TSMC (Taiwan), 4DS Memory Limited (US), and Reliance Memory (China), Sony Corporation (Japan), SanDisk (US), Weebit Nano (Australia), and Rambus Incorporated (US).


ReRAM Industry Developments


March 2022: saw the release of a 12Mbit ReRAM (Resistive Random Access Memory) by Fujitsu Semiconductor Memory Solution Ltd, the MB85AS12MT — representing the largest density within Fujitsu’s ReRAM product family. The technology works by means of pulsed voltage programming for a metal oxide located between cross-point electrodes. This was jointly developed with Nuvoton Technology Corp., Ltd., Japan – previously known as Panasonic Semiconductor Solutions Co., Ltd. Fujitsu has been promoting ReRAM as an adjunct non-volatile memory to its ferroelectric RAM (FRAM). Packaged in 2mm × 3mm format, it includes a read current averaging 0.15mA during operations; therefore, it can be applied in wearable devices such as smartwatches and hearing aids.


July 2021: CrossBar, a company specializing in resistive RAMs, announced that they had found another use for their Resistive Random-Access Memory technology – it can now act as a physical unclonable function or PUF, which generates cryptographic keys used mainly for secure computing applications like authentication and data encryption/decryption systems. As we know, traditionally, this type of memory is used as non-volatile semiconductor memories, but now we can see them being utilized for hardware security applications where they serve as so-called “cryptographic PUF keys” based on the company’s own words. These chips will enable us to build more secure and cheaper class devices and systems because they offer a better level of protection against various threats than other similar solutions available on the market.


ReRAM pioneer CrossBar is focusing on making its chips impervious to external content detection attacks and other security breaches, according to reports that have emerged from CES2019 this week. The storage-class memory uses resistive random access memory technology that allows fast reading times comparable with SRAM, low cost due to lower power consumption combined with non-volatility. Other developers in the ReRAM space include Weebit Nano and Intrinsic Technology, both of which use a silicon oxide material and a crosspoint-style architecture.


Intended Audience



  • RAM Manufacturers

  • Technology Providers

  • Original Equipment Manufacturers

  • Equipment distributors and suppliers

  • Technology standards organizations

  • Technology investors

  • System Integrators

  • Research institutes, organizations, and consulting companies

Report Attribute/Metric Details
Market Size 2027 USD 655 Million
CAGR 16% (2020-2027)
Base Year 2019
Forecast Period 2020-2027
Historical Data 2018
Forecast Units Value (USD Million)
Report Coverage Revenue Forecast, Competitive Landscape, Growth Factors, and Trends
Segments Covered By Type, End-User and Region
Geographies Covered North America, Europe, Asia-Pacific, and Rest of the World (RoW)
Key Vendors Crossbar Inc. (US), Fujitsu Limited (Japan), Intel Corporation (US), Panasonic Corporation (Japan), Semiconductor Manufacturing International Corporation (China), SK Hynix Inc. (South Korea), Adesto Technologies Corporation (US), Micron Technology, Inc. (US), TSMC (Taiwan), 4DS Memory Limited (US), and Reliance Memory (China), Sony Corporation (Japan), SanDisk (US), Weebit Nano (Australia), and Rambus Incorporated (US).
Key Market Opportunities The growing demand for emerging nonvolatile memory in connected devices is expected to fuel the growth of this market during the forecast period.
Key Market Drivers ReRAM has great potential for high storage density, lower power usage, greater read and write speeds, and affordable cost than flash memory because of the thinness of memristors.


Frequently Asked Questions (FAQ) :

The lower read latency and faster write performance are expected to push the market to new heights in terms of its development.

The availability of alternatives like DRAM and flash is expected to create a hindrance to the growth.

The Asia Pacific region is anticipated to sway the market to gain the leading position due to the presence of a large number of manufacturers of electronic products

A 16 % CAGR is expected to unlock the growth potential of the market.

SK Hynix Inc. (South Korea), Semiconductor Manufacturing International Corporation (China), Micron Technology, Inc. (US), Adesto Technologies Corporation (US), and TSMC (Taiwan) are the key contenders in the market.

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